IRFSL38N20D

200V Single N-Channel HEXFET Power MOSFET in a TO-262 package

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IRFSL38N20D
IRFSL38N20D

Product details

  • ID (@25°C) max
    43 A
  • Mounting
    THT
  • Package
    I2PAK (TO-262)
  • Polarity
    N
  • Ptot max
    320 W
  • Qgd
    28 nC
  • QG (typ @10V)
    60 nC
  • RDS (on) (@10V) max
    54 mΩ
  • RthJC max
    0.47 K/W
  • Tj max
    175 °C
  • VDS max
    200 V
  • VGS(th)
    4 V
  • VGS max
    30 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:

Benefits

  • RoHS Compliant
  • Industry-leading quality
  • Fully Characterized Avalanche Voltage and Current
  • Low Gate-to-Drain Charge to Reduce Switching Losses
  • Fully Characterized Capacitance Including Effective Coss to Simplify Design

Applications

Documents

Design resources

Developer community

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