IRFB812

500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

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IRFB812
IRFB812

Product details

  • ID (@25°C) max
    3.6 A
  • Mounting
    THT
  • Package
    TO-220
  • Polarity
    N
  • Ptot max
    78 W
  • Qgd
    4.8 nC
  • QG (typ @10V)
    13.3 nC
  • RDS (on) (@10V) max
    2200 mΩ
  • RthJC max
    1.6 K/W
  • Tj max
    150 °C
  • VDS max
    500 V
  • VGS(th)
    4 V
  • VGS max
    20 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:

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