Active and preferred
RoHS Compliant
Lead-free

IKA10N60T

600 V, 10 A IGBT Discrete with anti-parallel diode in TO220 Full-Pak package
Data Sheet
package
ea.
in stock

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

IKA10N60T
IKA10N60T
ea.
Data Sheet

Product details

  • Eoff (Hard Switching)
    0.27 mJ
  • Eon
    0.16 mJ
  • IC (@ 100°) max
    7.2 A
  • IC (@ 25° ) max
    11.7 A
  • ICpuls max
    30 A
  • IF max
    11.9 A
  • IFpuls max
    30 A
  • Irrm
    13 A
  • Package
    TO-220-3
  • Ptot max
    30 W
  • QGate
    67 nC
  • Qrr
    380 nC
  • RGint
    0 Ω
  • RG
    23 Ω
  • Soft Switching
    No
  • Switching Frequency
    2 kHz to 20 kHz
  • td(off)
    215 ns
  • td(on)
    12 ns
  • Technology
    IGBT TRENCHSTOP™
  • tf
    35 ns
  • tr
    8 ns
  • tSC
    5 µs
  • VCE(sat)
    1.5 V
  • VCE max
    600 V
  • VF
    1.6 V
Recommended
OPN
IKA10N60TXKSA1
Product Status active and preferred
Infineon Package
PG-TO220-3
Package Name FullPAK
Packing Size 500
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TO220-3
Package Name FullPAK
Packing Size 500
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
Hard-switching 600 V, 10 A TRENCHSTOP™ IGBT3 copacked with full-rated external free-wheeling diode in a TO220 Full-Pak package, leads to significant improvement of static as well as dynamic performance of the device, due to the combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

Features

  • Very Low VCEsat1.5 V (typ.)
  • Low switching losses
  • Positive temp. coeffi. in VCEsat
  • Easy parallel switching capability
  • Very soft anti-parallel Diode
  • High ruggedness
  • Temperature stable behavior
  • Low EMI emissions
  • Low gate charge
  • Very tight parameter distribution

Benefits

  • Highest efficiency
  • Comprehensive portfolio
  • High device reliability
  • low conduction and switching losses

Documents

Documents

Design resources

Partner solutions

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }