Active and preferred
RoHS Compliant
Lead-free

AIKQ200N75CP2

Data Sheet
package
board
ea.
in stock

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AIKQ200N75CP2
AIKQ200N75CP2
ea.
Data Sheet

Product details

  • Co-pack diode technology
    EMCON3
  • Eon
    15.3 mJ
  • IC (@ 25°) max
    200 A
  • IC (@ 100°) max
    200 A
  • ICpuls max
    600 A
  • IF max
    200 A
  • IFpuls max
    600 A
  • Irrm
    41 A
  • Launch year
    2022
  • Package
    TO-247-3
  • Planned to be available until at least
    2033
  • Ptot max
    1071 W
  • QGate
    1256 nC
  • Qrr
    4700 nC
  • Reflow Solderable
    No
  • Switching Frequency
    7kHz - 15kHz
  • td(off)
    266 ns
  • td(on)
    89 ns
  • Technology
    EDT2
  • tf
    46 ns
  • tr
    120 ns
  • Type
    IGBT + Diode
  • VCE(sat)
    1.3 V
  • VCE max
    750 V
  • VF
    1.8 V
  • Voltage Class max
    750 V
Recommended
OPN
AIKQ200N75CP2XKSA1
Product Status active and preferred
Infineon Package
PG-TO247-3
Package Name TO-247-3
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TO247-3
Package Name TO-247-3
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The automotive AIKQ200N75CP2 is a high-performance IGBT with 750V EDT technology, enabling efficient cooling and battery voltages up to 470V. Its tight parameter distribution and positive thermal coefficient allow easy paralleling for flexible and scalable power systems. With 200A current, it's the best in class IGBT in TO247PLUS package, reducing device count, increasing power density, and lowering costs.

Features

  • VCE = 750 V
  • 750 V collector-emitter blocking voltage
  • Smooth switching characteristics
  • Low VCE(sat), 1.30 V at ICnom = 200 A
  • Short circuit robust
  • Very tight parameter distribution
  • Fast soft rec Emitter Controlled 3 diode
  • Qualified according to AEC-Q101
  • Increase OV margin in application
  • Reduction of # of paralleled devices req
  • Simple gate drive design

Benefits

  • Benchmark qual & switching perf 470V Vdc
  • High CreepDist fills ATV V reqs 470V Vdc
  • Extremely robust fulfilling mission reqs
  • High switch freq -> less switch losses
  • Paralleling->=prod for diff power class

Documents

Documents

Design resources

Partner solutions

Developer community

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