Active and preferred
RoHS Compliant
Lead-free

AIKQ120N75CP2

Infineon Automotive 750V EDT2 technology in TO247PLUS package
Data Sheet
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AIKQ120N75CP2
AIKQ120N75CP2
ea.
Data Sheet

Product details

  • Co-pack diode technology
    EMCON3
  • Eon
    6.82 mJ
  • IC (@ 25° ) max
    150 A
  • IC (@ 100°) max
    120 A
  • ICpuls max
    360 A
  • IF max
    120 A
  • IFpuls max
    360 A
  • Irrm
    33 A
  • Launch year
    2022
  • Package
    TO-247-3
  • Planned to be available until at least
    2033
  • Ptot max
    682 W
  • QGate
    731 nC
  • Qrr
    3600 nC
  • Reflow Solderable
    No
  • Switching Frequency
    7kHz - 15kHz
  • td(off)
    244 ns
  • td(on)
    71 ns
  • Technology
    EDT2
  • tf
    50 ns
  • tr
    69 ns
  • Type
    IGBT + Diode
  • VCE(sat)
    1.3 V
  • VCE max
    750 V
  • VF
    1.7 V
  • Voltage Class max
    750 V
Recommended
OPN
AIKQ120N75CP2XKSA1
Product Status active and preferred
Infineon Package
PG-TO247-3
Package Name TO-247-3
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TO247-3
Package Name TO-247-3
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The automotive IGBT discrete AIKQ120N75CP2 is a high-performance EDT2 IGBT with a co-packed diode in the TO247PLUS package. Its 750V EDT technology enables battery voltages up to 470V, improving energy efficiency and cooling in high voltage automotive applications. With increased overvoltage margins, it allows safe fast switching and easy paralleling operation. Ideal for existing designs, it offers 120A nominal current and power scalability.

Features

  • VCE = 750 V
  • 750 V collector-emitter blocking voltage
  • Smooth switching characteristics
  • Very low VCE(sat),1.30 V (typ.)
  • Short circuit robust
  • Very tight parameter distribution
  • Fast soft rec Emitter Controlled 3 diode
  • Qualified according to AEC-Q101
  • Increase OV margin in application
  • Reduction of # of paralleled devices req
  • Simple gate drive design

Benefits

  • Benchmark qual & switching perf 470V Vdc
  • High CreepDist fills ATV V reqs 470V Vdc
  • Extremely robust fulfilling mission reqs
  • High switch freq -> less switch losses
  • Paralleling->=prod for diff power class

Documents

Documents

Design resources

Partner solutions

Developer community

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