Active and preferred
RoHS Compliant
Lead-free

2EDL8124G3C

120 V high side and low side 2EDL8124G3C EiceDRIVER™
Data Sheet
package
ea.
in stock

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2EDL8124G3C
2EDL8124G3C
ea.
Data Sheet

Product details

  • Channels
    2
  • Configuration
    High-side and low-side
  • Input Vcc
    8 V to 17 V
  • Isolation Type
    Functional levelshift JI (Junction Isolated)
  • Output Current (Sink)
    6 A, 5 A
  • Output Current (Source)
    4 A
  • Package
    PG-VSON-10
  • Qualification
    Industrial
  • Turn Off Propagation Delay
    45 ns
  • Turn On Propagation Delay
    45 ns
  • VBS UVLO
    5.75 V
  • VCC UVLO
    7 V
  • Voltage Class
    120 V
Recommended
OPN
2EDL8124G3CXTMA1
Product Status active and preferred
Infineon Package
PG-VSON-10
Package Name N/A
Packing Size 3000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-VSON-10
Package Name -
Packing Size 3000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The 2EDL8124G3C is a high-side and low-side driver designed for advanced switching converters such as in telecom and datacom applications. It takes in differential input with built-in hysteresis for enhanced noise immunity. The 2EDL8124G3C have an integrated 120 V boot-strap diode as well as a precise channel-to-channel propagation delay matching 6ns that ensures volt-second balance and avoids magnetic core saturation.

Features

  • Differential input for superb robustness with inherent shoot-through protection
  • 4 A source current capability for both high side and low side drivers
  • Strong 5 A high side / 6 A low side sink current capability
  • On chip boot strap diode
  • Fast switching frequency
  • Low dead-time losses
  • -8 V/+15 V common mode rejection
  • Small 3 mm x 3 mm SON package
  • Lead free RoHS compliant package

Benefits

  • High power density
  • High efficiency
  • Strong MOSFET reliability
  • High efficiency
  • Robust operation

Documents

Documents

Design resources

Partner solutions

Developer community

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