not for new design
RoHS Compliant
Lead-free

2EDF8275F

Fast, robust, dual-channel, functional isolated MOSFET gate drivers with accurate and stable timing

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2EDF8275F
2EDF8275F

Product details

  • Channels
    2
  • Configuration
    High-side, High-side and low-side, Half Bridge
  • Input Vcc
    3 V to 3.3 V
  • Input-side supply
    20 V
  • Isolation Type
    Galvanic isolation - Functional
  • Output Current (Sink)
    8 A
  • Output Current (Source)
    4 A
  • Product Name
    2EDF8275F
  • Qualification
    Industrial
  • Turn Off Propagation Delay
    37 ns
  • Turn On Propagation Delay
    37 ns
  • VBS UVLO (On)
    8 V
  • VBS UVLO (Off)
    7 V
  • VCC UVLO (On)
    2.85 V
  • Voltage Class
    650 V
OPN
2EDF8275FXUMA1
Product Status not for new design
Infineon Package
Package Name N/A
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status not for new design
Infineon Package
Package Name -
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
2EDF8275F is perfect for robust and stable operation for primary side control of high- and low-side MOSFETs in noisy high-power switching environments. The strong 4A/8A source/sink dual-channel gate drivers provide a fast turn on/off when driving high- and medium-voltage MOSFETs such as CoolMOS™ or OptiMOS™. Both output channels are individually isolated and can be flexibly deployed as floating gate drivers with very high 150V/ns CMTI.

Features

  • Fast power switching w/ accurate timing
  • Optimized low cost system BOM
  • Robust design against switching noise
  • Output-to-output channel isolation
  • Input-to-output channel isolation

Benefits

  • Power effic & high res PWM control
  • Protection and safe operation
  • Flex assign't of any driver channel
  • Floating gate drive; regulatory safety

Documents

Design resources

Developer community

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