Active and preferred
RoHS Compliant
Lead-free

2ED1321S12M

1200 V high-side/low-side gate driver IC with integrated bootstrap diode and OCP
Data Sheet
package
ea.
in stock

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2ED1321S12M
2ED1321S12M
ea.
Data Sheet

Product details

  • Channels
    2
  • Configuration
    High-side and low-side
  • Input Vcc min
    13 V
  • Isolation Type
    Functional levelshift SOI (Silicon On Insulator)
  • Output Current (Source)
    2.3 A
  • Output Current (Sink)
    4.6 A
  • Product Name
    2ED1321S12M
  • Qualification
    Industrial
  • Turn Off Propagation Delay
    350 ns
  • Turn On Propagation Delay
    350 ns
  • VBS UVLO (Off)
    11.3 V
  • VBS UVLO (On)
    12.2 V
  • VCC UVLO (Off)
    11.3 V
  • VCC UVLO (On)
    12.2 V
  • Voltage Class
    1200 V
Recommended
OPN
2ED1321S12MXUMA1
Product Status active and preferred
Infineon Package
PG-DSO-16
Package Name N/A
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-DSO-16
Package Name -
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
EiceDRIVER™ 1200 V high-side/low-side gate driver IC with typical 2.3 A source, 4.6 A sink current in DSO-16 (300mils) package for 1200 V SiC MOSFET and IGBT power devices. The 2ED1321S12M is based on our SOI-technology which has an excellent ruggedness and noise immunity against negative transient voltages on VS pin. Since the device has no parasitic thyristor structures, the design is very robust against parasitic latch up across the operating temperature and voltage range.

Features

  • Unique thin-film (SOI)-technology
  • Max. boots. volt. (VB node) +1225 V
  • Operating voltages < + 1200 V
  • Negative VS transient vol. immunity
  • 2.3 A/4.6 A peak output source/sink
  • Integrated over-current protection
  • ± 5% high accu. reference threshold
  • Shutdown less than 1 us
  • Integr. ultra-fast bootstrap diode
  • Dead-time & shoot-through preventi.
  • Enable, Fault & programmable Fault
  • Logic operational < –8 V on VS Pin

Diagrams

Diagram_2ED132xS12M
Diagram_2ED132xS12M
Diagram_2ED132xS12M Diagram_2ED132xS12M Diagram_2ED132xS12M
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