Active and preferred
RoHS Compliant

IQEH84NE2LM7UCG

OptiMOS™ 7 25 V switching optimized power MOSFETs for hard- and soft-switching topologies in PQFN 3.3x3.3 Source-Down package
Data Sheet
package
ea.
in stock

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IQEH84NE2LM7UCG
IQEH84NE2LM7UCG
ea.
Data Sheet

Product details

  • ID (@25°C) max
    275 A
  • IDpuls max
    1100 A
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    PQFN 3.3x3.3 Source-Down
  • Polarity
    N
  • QG (typ @10V)
    37 nC
  • QG (typ @4.5V)
    17.2 nC
  • RDS (on) (@4.5V) max
    1.3 mΩ
  • RDS (on) (@10V) max
    0.84 mΩ
  • Special Features
    Hard-switching optimized
  • VDS max
    25 V
  • VGS(th)
    1.7 V
Recommended
OPN
IQEH84NE2LM7UCGATMA1
Product Status active and preferred
Infineon Package
PG-TTFN-9
Package Name N/A
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TTFN-9
Package Name -
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The OptiMOS™ 7 25 V offers a new level of application-optimization, enabling peak performance for data centers, servers, AI more. The portfolio is available in two technology flavors, including products optimized for hard-switching as well as for soft-switching topologies. Hard-switching optimized products come with an excellent Miller ratio, FOMs and RDS(on)10, while products optimized for soft-switching offer ultra-low RDS(on)45 and FOMQg.

Features

  • Hard- and soft-switching optimizations
  • Hard-switch.: Miller ratio, FOM, RDS(on)10
  • Soft-switch.: RDS(on)45, FOMQg
  • +175°C junction temperature rating
  • Source-down package variants
  • Center-gate footprint, DSC overmolded

Benefits

  • Application-specific optimization
  • Improved performance efficiency
  • Advanced induced turn-on ruggedness
  • Reduced driver and switching losses
  • Reduced conduction losses
  • Increased reliability and power density
  • Superior thermal capabilities
  • Reduced package parasitics
  • Simplified paralleling of MOSFETs

Documents

Documents

Design resources

Partner solutions

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }