Please note that this is an end of life product. See newer alternative product version Please note that this is an end of life product. See newer alternative product version
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END OF LIFE
discontinued
RoHS Compliant

IPS80R900P7

END OF LIFE
A new benchmark in efficiency and thermal performance
Data Sheet
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IPS80R900P7
IPS80R900P7
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Data Sheet

Product details

  • Budgetary Price €/1k
    0.44
  • ID (@25°C) max
    6 A
  • ID max
    6 A
  • IDpuls max
    14 A
  • Mounting
    THT
  • Operating Temperature
    -55 °C to 150 °C
  • Package
    IPAK short leads
  • Pin Count
    3 Pins
  • Polarity
    N
  • Ptot max
    45 W
  • Qgd
    6 nC
  • QG
    15 nC
  • QG (typ @10V)
    15 nC
  • RDS (on) max
    900 mΩ
  • RDS (on) (@10V) max
    900 mΩ
  • RthJA max
    62 K/W
  • RthJC max
    2.8 K/W
  • Rth
    2.8 K/W
  • Special Features
    price/performance
  • VDS max
    800 V
  • VGS(th)
    3 V
OPN
IPS80R900P7AKMA1
Product Status discontinued
Infineon Package PG-TO251-3
Package Name IPAK short leads
Packing Size 1500
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
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Product Status discontinued
Infineon Package PG-TO251-3
Package Name IPAK short leads
Packing Size 1500
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
800V CoolMOS™ P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power.   This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.

Features

  • Best-in-class FOM R DS(on) * E oss; reduced Qg, C iss and C oss
  • Best-in-class DPAK R DS(on) of 280mΩ
  • Best-in-class V (GS)th of 3V and smallest V (GS)th variation of ± 0.5V
  • Integrated Zener diode ESD protection up to Class 2 (HBM)
  • Best-in-class quality and reliability
  • Fully optimized portfolio

Benefits

  • 0.1% to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature as compared to CoolMOS™ C3
  • Enabling higher power density designs, BOM savings and lower assembly cost
  • Easy to drive and to design-in
  • Better production yield by reducing ESD related failures
  • Less production issues and reduced field returns
  • Easy to select right parts for fine tuning of designs

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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