Active and preferred
RoHS Compliant
Lead-free

IMSQ120R053M2HH

CoolSiC™ MOSFET discrete 1200 V in top-side cooled Q-DPAK dual half-bridge package
Data Sheet
package
ea.
in stock

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IMSQ120R053M2HH
IMSQ120R053M2HH
ea.
Data Sheet

Product details

  • Ciss
    1010 pF
  • Coss
    41 pF
  • ID (@25°C) max
    38 A
  • Mounting
    SMD
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    PG-HDSOP-16
  • Pin Count
    4 Pins
  • Polarity
    N
  • Ptot max
    182 W
  • Qgd
    8 nC
  • QG
    30 nC
  • Qualification
    Industrial
  • RDS (on) (@ Tj = 25°C)
    53 mΩ
  • RthJA max
    62 K/W
  • RthJC max
    0.82 K/W
  • Technology
    CoolSiC™ G2
  • Tj max
    200 °C
  • VDS max
    1200 V
Recommended
OPN
IMSQ120R053M2HHXUMA1
Product Status active and preferred
Infineon Package
PG-HDSOP-16
Package Name N/A
Packing Size 750
Packing Type TAPE & REEL
Moisture Level 2
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-HDSOP-16
Package Name -
Packing Size 750
Packing Type TAPE & REEL
Moisture Level 2
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
CoolSiC™ MOSFET discrete 1200 V, 53 mΩ G2 in a top-side cooled Q-DPAK dual half-bridge package specifically designed for wide use in industrial application, including, industrial drives, EV charging solutions, solar systems and uninterruptible power supply. The Q-DPAK provides customers with a reduced system cost by enabling easier assembly with outstanding thermal performance. Compared to bottom-side cooled solutions, top-side cooled devices enable a more optimized PCB layout, which in turn reduces the effects of parasitic components and stray inductances, while also providing enhanced thermal management capabilities.
The top-side cooled Q-DPAK Dual half-bridge package is introducing a new era in cooling, energy efficiency, design flexibility and performance.

Features

  • VDSS = 1200 V at Tvj = 25°C
  • IDDC = 32 A at TC = 100°C
  • RDS(on) = 53 mΩ, VGS = 18 V, Tvj = 25°C
  • Very low switching losses
  • Overload operation up to Tvj = 200°C 
  • Short circuit withstand time 2 µs
  • Benchmark gate threshold voltage 4.2 V
  • Robust against parasitic turn on
  • Robust body diode for hard commutation
  • .XT interconnection technology 

Benefits

  • Higher power density
  • Enabling automated assembly
  • Less complex designs needed
  • Outstanding thermal performance vs BSC
  • Improve system power losses
  • Enable a VRMS of 950 V with PD 2
  • Lower TCO cost or BOM cost

Documents

Documents

Design resources

Partner solutions

Developer community

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