Active and preferred
RoHS Compliant
Lead-free

IKQ120N65EH7

650 V, 120 A IGBT with anti-parallel diode in TO247PLUS-3 package
ea.
in stock

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IKQ120N65EH7
IKQ120N65EH7
ea.

Product details

  • Eoff (Hard Switching)
    3.7 mJ
  • Eon
    6.1 mJ
  • IC (@ 25°) max
    160 A
  • IC (@ 100°) max
    136 A
  • ICpuls max
    480 A
  • IF max
    160 A
  • IFpuls max
    480 A
  • Irrm
    67 A
  • Package
    TO-247PLUS-3
  • Ptot max
    498 W
  • QGate
    251 nC
  • Qrr
    6700 nC
  • RGint
    0 Ω
  • RG
    10 Ω
  • Switching Frequency
    16 kHz to 100 kHz
  • td(off)
    317 ns
  • td(on)
    38 ns
  • Technology
    TRENCHSTOP™ IGBT7
  • tf
    90 ns
  • tr
    62 ns
  • VCE(sat)
    1.6 V
  • VCE max
    650 V
  • VF
    1.65 V
  • VGE(th)
    3.85 V
OPN
IKQ120N65EH7XKSA1
Product Status active and preferred
Infineon Package
Package Name N/A
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
ea. in stock

Product Status
Active
Infineon Package
Package Name -
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
Hard-switching 650 V, 120 A TRENCHSTOP™ IGBT7 H7 discrete in TO247PLUS-3 package technology has been developed to fulfill the demand in green & efficient energy applications, while also offering significant improvements over its predecessor generations.

Features

  • Excellent VCE(sat) behavior thanks to the famous TRENCHSTOP™ technology
  • Very soft, fast recovery antiparallel diode
  • Offering Tj(max) of 175°C
  • Optimized for hard switching, two and three level topologies

Benefits

  • Technology with the high power density with up to 150 A rating 
  • Optimized performance in application conditions
  • Lowest conduction losses 
  • Lowest switching losses 
  • Humidity robustness under harsh environment
  • Improved EMI performance

 

Documents

Design resources

Developer community

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