Active and preferred
RoHS Compliant

BSZ021N04LS6

OptiMOS™ 6 40V power MOSFETs combining best-in-class RDS(on) with superior switching performance
Data Sheet
package
ea.
in stock

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BSZ021N04LS6
BSZ021N04LS6
ea.
Data Sheet

Product details

  • Budgetary Price €/1k
    0.52
  • ID (@ TC=25°C) max
    147 A
  • ID (@25°C) max
    147 A
  • IDpuls max
    588 A
  • Mounting
    SMT
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    PQFN 3.3 x 3.3 Fused Lead
  • Pin Count
    8 Pins
  • Polarity
    N
  • Ptot max
    83 W
  • QG (typ @10V)
    31 nC
  • QG (typ @4.5V)
    15 nC
  • RDS (on) (@10V) max
    2.1 mΩ
  • RDS (on) (@4.5V) max
    3 mΩ
  • VDS max
    40 V
  • VGS(th)
    1.7 V
Recommended
OPN
BSZ021N04LS6ATMA1
Product Status active and preferred
Infineon Package
PG-TSDSON-8
Package Name PQFN 3x3
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TSDSON-8
Package Name PQFN 3x3
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The OptiMOS™ 6 power MOSFET 40V family is optimized for a variety of applications and circuits, such as synchronous rectification in switched mode power supplies (SMPS) in servers, desktop PCs, wireless chargers, quick chargers and ORing circuits. Improvements in on-state resistance (RDS(on)) and figure of merits (FOM - RDS(on) x Qg and Qgd) enable designers to increase efficiency, allowing easier thermal design and less paralleling, leading to system cost reduction.

Features

  • Compared to alternative products:
  • RDS(on) reduced by 30%
  • Improved FOM Qg x RDS(on) by 29%
  • Improved FOM Qgd x RDS(on) by 46%
  • Optimized for synchronous rectification
  • Suited for ORing circuits
  • RoHS compliant
  • halogen free
  • MSL1 rated

Benefits

  • Highest system efficiency
  • Less paralleling required
  • Increased power density
  • Very low voltage overshoot
  • Reduced need for snubber circuit
  • System cost reduction

Documents

Documents

Design resources

Partner solutions

Developer community

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