Overview

The RC-H devices offer incredibly low switching and conduction losses, improved thermal performance, and reduced power dissipation. They guarantee the best reliability for resonant switching application, even in high ambient temperature environments. Optimized for soft switching behavior, they offer excellent EMI behavior thus leading to less filtering requirements and ultimately to lower system costs.

Products

About

Introduction of the Reverse Conducting (RC-H) IGBTs

RC-H IGBTs, with a monolithically integrated diode, are the perfect match for soft switching application as induction cooking stoves, inverterized microwave ovens, and rice cookers. 

We combine the industry's leading performance of the TRENCHSTOP™ family with the innovative RC-H IGBT technology to create a new generation of best-in-class devices.

RC-H IGBTs matches perfectly with EiceDRIVER™ families of low-side and half-bridges gate drivers for IGBT.

More about gate driver ICs
About the 650 V Reverse Conducting R6

The R6 IGBT family, with its monolithically diode, offers the perfect trade-off between power losses and EMI behavior for all half-bridge resonant switching applications up to 75 kHz.

The 650 V R6 portfolio, released in three current classes -30 A, 40 A, and 50 A, provides the lowest VCEsat for best efficiency along with lower turn-off losses and overall improved diode performance. Thanks to the improved diode, the VF has been reduced and the dependency of gate voltage has been almost completely eliminated. The 650 V R6 devices show a great compatibility with existing gate driver solutions.

The products incorporates important key features, such as, compared to the previous 650 V R5 generation, the IGBT VCEsat which is reduced by 5%, diode forward voltage reduced by 12%, and diode forward voltage independent from VGE. The Tj(max) is 175°C and the products consists of a soft current turn-off waveforms for low EMI.

The key benefits are, among other things, lowest device power dissipation in half-bridge resonant converters up to 75kHz, plug & play solution for half-bridge IH application, and better thermal management for higher reliability.

About the 650 V, 1100 V, 1200 V, 1350 V, 1600 V Reverse Conducting R5

The R5 family is offered in three current classes – 20 A, 30 A, and 40 A - for blocking voltages of 650 V, 1200 V, and 1350 V.

The 1600 V R5 completes the latest generation of Reverse Conducting IGBTs, developed and optimized for the higher reliability demand of high-end induction cooking applications, offering best-in class efficiency with low switching, and conduction losses for soft switching applications. 1600 V R5 is available in 30 A current class.

With the wide current and voltage classes, the Reverse Conducting R5 family represents the most comprehensive offer of IGBT for home appliances based on resonant switching topologies, like induction cookers and inverterized microwave ovens. In addition, the 1100 V R5 is available in 30 A current class.

The products incorporate important key features, such as, Tj(max) of 175°C, high and stable V(BR)CES and compared to the previous R3 generation the switching losses are reduced by 30%.

The key benefits are, among other things, increase of maximum switching frequency operations, lowest power dissipation, better thermal management, highest reliability, and reduced system costs.

About the 1200 V Reverse Conducting E1

The Reverse Conducting E1 family is offered in current classes of 15 A and 25 A - for blocking voltage of 1200 V. The reverse conducting E1 technology has been optimized to guarantee the best cost position among the available RC-H families. It features good thermal performance and low EMI filtering requirements, thus reducing overall system costs and design efforts.

The products incorporates important key features, such as, Tj(max) of 150°C, soft current turn-off waveforms for low EMI, optimized for minimum cost, and compared to the previous R3 generation the conduction losses are reduced by 10%.

Key applications

The 650 V/ 1100 V/ 1200 V/ 1350 V/ 1600 V RC-H Reverse Conducting IGBTs can be used in several applications, e.g., induction cookers, inverterized microwave ovens, induction rice cookers, and induction single-burn cookers.

About 1400 V Reverse Conducting R5L

The 1400 V Reverse Conducting R5L with monolithically integrated reverse conducting diode in a TO-247 3pin package has been specially designed to fulfill specific requirement of induction cooking applications and embodies the next level of Infineon technology in improved vertical design and edge termination to realize a narrower losses distribution comparing to existing Reverse Conducting R5 family.

The Reverse Conducting R5L family is offered in four current class – 20 A, 25 A, 30 A, and 40 A – with the increase breakdown voltage of 1400 V and shows low conduction and switching losses in the induction heating appliance with improved reliability, optimal thermal performance, and better design flexibility.

The products incorporates important key features, such as, the Vf improved by 8% compared with 1350 V Reverse Conducting R5, very tight distribution of losses, temperature stable behavior increased breakdown voltage 1400 V, and extended new current class of 25 A.

The key benefits are, among other things, smallest power losses, increased energy efficiency with less cooling effort, lower stress with less resistive cookware, longevity, and higher peak collector current capability.

Introduction of the Reverse Conducting (RC-H) IGBTs

RC-H IGBTs, with a monolithically integrated diode, are the perfect match for soft switching application as induction cooking stoves, inverterized microwave ovens, and rice cookers. 

We combine the industry's leading performance of the TRENCHSTOP™ family with the innovative RC-H IGBT technology to create a new generation of best-in-class devices.

RC-H IGBTs matches perfectly with EiceDRIVER™ families of low-side and half-bridges gate drivers for IGBT.

More about gate driver ICs

About the 650 V Reverse Conducting R6

The R6 IGBT family, with its monolithically diode, offers the perfect trade-off between power losses and EMI behavior for all half-bridge resonant switching applications up to 75 kHz.

The 650 V R6 portfolio, released in three current classes -30 A, 40 A, and 50 A, provides the lowest VCEsat for best efficiency along with lower turn-off losses and overall improved diode performance. Thanks to the improved diode, the VF has been reduced and the dependency of gate voltage has been almost completely eliminated. The 650 V R6 devices show a great compatibility with existing gate driver solutions.

The products incorporates important key features, such as, compared to the previous 650 V R5 generation, the IGBT VCEsat which is reduced by 5%, diode forward voltage reduced by 12%, and diode forward voltage independent from VGE. The Tj(max) is 175°C and the products consists of a soft current turn-off waveforms for low EMI.

The key benefits are, among other things, lowest device power dissipation in half-bridge resonant converters up to 75kHz, plug & play solution for half-bridge IH application, and better thermal management for higher reliability.

About the 650 V, 1100 V, 1200 V, 1350 V, 1600 V Reverse Conducting R5

The R5 family is offered in three current classes – 20 A, 30 A, and 40 A - for blocking voltages of 650 V, 1200 V, and 1350 V.

The 1600 V R5 completes the latest generation of Reverse Conducting IGBTs, developed and optimized for the higher reliability demand of high-end induction cooking applications, offering best-in class efficiency with low switching, and conduction losses for soft switching applications. 1600 V R5 is available in 30 A current class.

With the wide current and voltage classes, the Reverse Conducting R5 family represents the most comprehensive offer of IGBT for home appliances based on resonant switching topologies, like induction cookers and inverterized microwave ovens. In addition, the 1100 V R5 is available in 30 A current class.

The products incorporate important key features, such as, Tj(max) of 175°C, high and stable V(BR)CES and compared to the previous R3 generation the switching losses are reduced by 30%.

The key benefits are, among other things, increase of maximum switching frequency operations, lowest power dissipation, better thermal management, highest reliability, and reduced system costs.

About the 1200 V Reverse Conducting E1

The Reverse Conducting E1 family is offered in current classes of 15 A and 25 A - for blocking voltage of 1200 V. The reverse conducting E1 technology has been optimized to guarantee the best cost position among the available RC-H families. It features good thermal performance and low EMI filtering requirements, thus reducing overall system costs and design efforts.

The products incorporates important key features, such as, Tj(max) of 150°C, soft current turn-off waveforms for low EMI, optimized for minimum cost, and compared to the previous R3 generation the conduction losses are reduced by 10%.

Key applications

The 650 V/ 1100 V/ 1200 V/ 1350 V/ 1600 V RC-H Reverse Conducting IGBTs can be used in several applications, e.g., induction cookers, inverterized microwave ovens, induction rice cookers, and induction single-burn cookers.

About 1400 V Reverse Conducting R5L

The 1400 V Reverse Conducting R5L with monolithically integrated reverse conducting diode in a TO-247 3pin package has been specially designed to fulfill specific requirement of induction cooking applications and embodies the next level of Infineon technology in improved vertical design and edge termination to realize a narrower losses distribution comparing to existing Reverse Conducting R5 family.

The Reverse Conducting R5L family is offered in four current class – 20 A, 25 A, 30 A, and 40 A – with the increase breakdown voltage of 1400 V and shows low conduction and switching losses in the induction heating appliance with improved reliability, optimal thermal performance, and better design flexibility.

The products incorporates important key features, such as, the Vf improved by 8% compared with 1350 V Reverse Conducting R5, very tight distribution of losses, temperature stable behavior increased breakdown voltage 1400 V, and extended new current class of 25 A.

The key benefits are, among other things, smallest power losses, increased energy efficiency with less cooling effort, lower stress with less resistive cookware, longevity, and higher peak collector current capability.

Documents

Documents

Videos about 650 V to 1600 V RC-H Reverse Conducting IGBTs

1400 V reverse-conducting R5L - next Level of induction heating

​Get to know more about the reverse-conducting R5L IGBT, the next generation of Infineon’s RC technology, developed to meet the specific requirements of induction heating applications. ​