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IGC090S18S1

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CoolGaN™ Transistor 175 V G3 in PQFN 3x5, 6.7 mΩ
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IGC090S18S1
IGC090S18S1
Data Sheet

Product details

  • ID (@25°C) max
    46 A
  • IDpuls (@25°C) max
    340 A
  • Package
    PQFN
  • QG
    8.2 nC
  • Qualification
    Industrial
  • RDS (on) (typ)
    6.7 mΩ
  • VDS max
    175 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
The IGC090S18S1 is a 175 V normally-off e-mode power transistor housed in a small PQFN 3x5 package, enabling high power density designs. Thanks to its very low on-state resistance, it is the ideal choice for reliable performance in demanding high-voltage and high-current applications.

Features

  • 175 V e-mode power transistor
  • Dual-side cooled package
  • No reverse recovery charge
  • Reverse conduction capability
  • Low gate charge, low output charge
  • Qualfied according to JEDEC

Benefits

  • Best-in-class power density
  • Highest efficiency
  • Improved thermal management
  • Enabling smaller and lighter designs
  • Excellent reliability
  • Lowering BOM cost

Documents

Documents

Design resources

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