IGC090S18S1
NEW
coming soon
RoHS Compliant
Lead-free

IGC090S18S1

NEW
CoolGaN™ Transistor 175 V G3 in PQFN 3x5, 6.7 mΩ

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

IGC090S18S1
IGC090S18S1

Product details

  • ID (@25°C) max
    46 A
  • IDpuls (@25°C) max
    340 A
  • Package
    PQFN
  • QG
    8.2 nC
  • Qualification
    Industrial
  • RDS (on) (typ)
    6.7 mΩ
  • VDS max
    175 V
OPN
IGC090S18S1XTMA1
Product Status coming soon
Infineon Package
Package Name N/A
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status coming soon
Infineon Package
Package Name -
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
The IGC090S18S1 is a 175 V normally-off e-mode power transistor housed in a small PQFN 3x5 package, enabling high power density designs. Thanks to its very low on-state resistance, it is the ideal choice for reliable performance in demanding high-voltage and high-current applications.

Features

  • 175 V e-mode power transistor
  • Dual-side cooled package
  • No reverse recovery charge
  • Reverse conduction capability
  • Low gate charge, low output charge
  • Qualfied according to JEDEC

Benefits

  • Best-in-class power density
  • Highest efficiency
  • Improved thermal management
  • Enabling smaller and lighter designs
  • Excellent reliability
  • Lowering BOM cost
Documents

Design resources

Developer community