Galvanic Isolated Gate Driver

Overview

Robust, strong and precise single- and dual-channel, isolated gate driver ICs for MOSFETs, IGBTs, IGBT modules, SiC MOSFETs and GaN HEMTs

EiceDRIVER™ galvanically isolated gate drivers use the magnetically-coupled coreless transformer (CT) technology to provide signal transfer across the galvanic isolation. We offer functional, basic and reinforced isolated, UL 1577 and VDE 0884 certified products. The isolation allows very large voltage swings (e.g. ±8000 V).

Our isolated drivers incorporate most important key features and parameters for MOSFET, IGBT, IGBT modules, SiC MOSFET and GaN HEMT driving. EiceDRIVER™ are available as industrial and as automotive qualified products.
Depending on power switch type and applications, EiceDRIVER™ galvanically isolated gate-driver ICs offer excellent propagation delay accuracy, precise input filters, very low-ohmic source and sink outputs, fast output clamping, short circuit protection, active Miller clamp, DESAT protection, wide output-side supply range, negative gate-voltage capability, soft turn-off, two-level turn-off, strong reverse-current robustness, extended CMTI capability of 300 kV/μs and multiple UVLO choices. The galvanically isolated gate-driver ICs also provide strong, up to 10 A gate-drive currents for excellent power-switching efficiencies. Package options include small LGA as well as DSO 8-pin to 36-pin variants.

Select one of our product groups for detailed information

Products
Details

Robust integrated galvanic isolation from input to outputs, and in case of dual-channel isolated gate-driver ICs, as well as between the output channels, are important for hard-switching half-bridge configurations. Integrated reinforced input-to-output isolation is key for electrical safety, where needed. Industry leading precision timing characteristics, both across production and temperature range, enable the next level of power conversion system efficiency.
The extremely short propagation delays keep the designer’s flexibilities at the highest level, while the circuit is easy to use and the features comfortable to handle. Our products operate stable in harsh EMC environments and drive up to 300 A/1200 V IGBTs with its integrated 10 A output stage.

Main benefits Key features Applications
  • Galvanic isolation (functional, basic, reinforced)
  • Allows very large voltage swings of ±1200 V or larger
  • Immunity against negative and positive transients
  • Increases reliability of the end product
  • Low power losses
  • Suitable for operation at high ambient temperature
  • UL 1577 certified up to VISO = 5700 V(rms) for 1 min
  • VDE 0884-10 certified up to VIORM = 1420 V, VIOTM = 8000 V
  • Available in 300 mil wide body package with 8 mm creepage distance, DSO-8 150 mil package and 5x5 mm LGA
  • Up to 10 A typical peak rail-to-rail output current
  • DESAT protection
  • Active Miller clamp
  • ≥ 100 kV/µs CMTI
  • Short-circuit clamping
  • Active shutdown
  • Wide input operation range (3 - 17 V)
  • Precise dynamic gate-current control (slew-rate control)
  • Soft turn-off
  • Two-level turn-off
  • Separate source and sink outputs
  • Industry leading low-ohmic output stages
  • 5 A reverse current robustness
  • Industry leading input-to-output propagation delay accuracy, 7 ns accuracy
  • Industry leading channel-to-channel precision, 3 ns exactness
  • Two-level negative gate-driver voltage

 

Certificates


Part number

 UL 1577 (Vrms)
2250 2500 3000 5000 5700
1EDB7275F     √    
1EDB8275F     √    
1EDB9275F     √    
1EDB6275F     √    
Part Numbers UL 1577 (Vrms)

VED0884-11 Reinforced

EN 60950-1*
Reinforced

 EN 62368-1 EN 61010-1 GB4943.1
2250 2500 3000 5700 Basic Reinforced Basic Reinforced
2EDS8165H       √   √   √ √   √
2EDS8265H       √   √   √ √   √
2EDS9265H                      
2EDF7275F                      
2EDF7175F                      
2EDF9275F                      
2EDF7275K                      
2EDF7235K                      
2EDR8259H       √ √     √     √
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2EDR8259X       √ √     √     √
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Part Numbers UL 1577 (Vrms)
2250 2500 3000 3750 5000 5700
1ED020I12-B2       √    
1ED020I12-BT       √    
1EDC05I12AH   √        
1EDC10I12MH   √        
1EDC20H12AH   √        
1EDC20I12AH   √        
1EDC20I12MH   √        
1EDC30I12MH   √        
1EDC40I12AH   √        
1EDC60H12AH   √        
1EDC60I12AH   √        
1EDI20I12SV            
1EDS20I12SV         √  
1EDU20I12SV         √  
Part Number UL 1577 (Vrms) VDE0884-11 
2250 2500 3000 3750 5000 5700 Reinforced
1ED3120MC12H           √ √ 
1ED3121MC12H           √ √ 
1ED3122MC12H           √ √ 
1ED3123MC12H           √ √ 
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1ED3131MC12H           √ √ 
1ED3431MC12M           √ √ 
1ED3461MC12M           √ √ 
1ED3491MC12M           √ √ 
1ED3830MC12M           √ √ 
1ED3860MC12M           √ √ 
1ED3890MC12M           √ √ 
1ED3120MU12H           √  
1ED3121MU12H           √  
1ED3122MU12H           √  
1ED3123MU12H           √  
1ED3124MU12H           √  
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1ED3491MU12M           √  
1ED3830MU12M           √  
1ED3860MU12M           √  
1ED3890MU12M           √  
1ED3124MU12F     √        
1ED3125MU12F     √        
1ED3240MC12H           √ √
1ED3241MC12H           √ √
1ED3250MC12H           √ √
1ED3251MC12H           √ √
1ED3320MC12N           √ √
1ED3321MC12N           √ √
1ED3322MC12N           √ √
1ED3323MC12N           √ √
1ED3140MU12F     √        
1ED3141MU12F     √        
1ED3142MU12F     √        
1ED3126MU12F     √        
1ED3127MU12F     √        
1ED3126MC12H           √ √
1ED3127MC12H           √ √
1ED3128MC12H           √ √
1ED3129MC12H           √ √

Part Numbers		 UL 1577 (Vrms) VDE0884-11 Reinforced
2250 2500 3000 3750 5000 5700
1ED020I12FA2   √          
2ED020I12FA   √          
1ED020I12FTA   √          
1EDI2001AS     √        
1EDI2002AS     √        
1EDI2010AS     √        
1EDI2003AS     √        
1EDI2004AS     √        
1EDI3020AS           √ √ (pending)
1EDI3021AS           √ √ (pending)
1EDI3023AS           √ √ (pending)
1EDI3030AS           √ √ (pending)
1EDI3031AS           √ √ (pending)
1EDI3033AS           √ √ (pending)
1EDI3050AS           √ √ (planned)
1EDI3051AS           √ √ (planned)
1EDI3025AS           √ √ (planned)
1EDI3035AS           √ √ (planned)
1EDI3040AS           √ √ (planned)

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  • The new EiceDRIVER™ X3 Digital family (1ED38xx), with I2C-configurability for DESAT, Soft-Off, UVLO, Miller clamp, two level turn off (TLTO).
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With this training, you will learn how to calculate a gate resistance value for an IGBT application, how to identify suitable gate driver ICs based on peak current and power dissipation requirements, and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.

Silicon Carbide MOSFETs bring a lot of opportunities to power electronics. However, how to achieve sufficient system benefits by using Silicon Carbide MOSFETs with suitable gate drivers? This training helps you to learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET; how to identify suitable gate driving ICs based on peak current and power dissipation requirements; and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.

Infineon traning Isolated gate driving solutions

Learn how Infineon’s EiceDRIVER™ galvanically-isolated gate driver ICs enable best-in-class efficiency while reducing the total system cost.

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  • Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc.

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