Galvanic Isolated Gate Driver
Robust, strong and precise single- and dual-channel, isolated gate driver ICs for MOSFETs, IGBTs, IGBT modules, SiC MOSFETs and GaN HEMTs
EiceDRIVER™ galvanically isolated gate drivers use the magnetically-coupled coreless transformer (CT) technology to provide signal transfer across the galvanic isolation. We offer functional, basic and reinforced isolated, UL 1577 and VDE 0884 certified products. The isolation allows very large voltage swings (e.g. ±8000 V).
Our isolated drivers incorporate most important key features and parameters for MOSFET, IGBT, IGBT modules, SiC MOSFET and GaN HEMT driving. EiceDRIVER™ are available as industrial and as automotive qualified products.
Depending on power switch type and applications, EiceDRIVER™ galvanically isolated gate-driver ICs offer excellent propagation delay accuracy, precise input filters, very low-ohmic source and sink outputs, fast output clamping, short circuit protection, active Miller clamp, DESAT protection, wide output-side supply range, negative gate-voltage capability, soft turn-off, two-level turn-off, strong reverse-current robustness, extended CMTI capability of 300 kV/μs and multiple UVLO choices. The galvanically isolated gate-driver ICs also provide strong, up to 10 A gate-drive currents for excellent power-switching efficiencies. Package options include small LGA as well as DSO 8-pin to 36-pin variants.
Select one of our product groups for detailed information
Robust integrated galvanic isolation from input to outputs, and in case of dual-channel isolated gate-driver ICs, as well as between the output channels, are important for hard-switching half-bridge configurations. Integrated reinforced input-to-output isolation is key for electrical safety, where needed. Industry leading precision timing characteristics, both across production and temperature range, enable the next level of power conversion system efficiency.
The extremely short propagation delays keep the designer’s flexibilities at the highest level, while the circuit is easy to use and the features comfortable to handle. Our products operate stable in harsh EMC environments and drive up to 300 A/1200 V IGBTs with its integrated 10 A output stage.
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Learn how Infineon’s EiceDRIVER™ galvanically-isolated gate driver ICs enable best-in-class efficiency while reducing the total system cost.
- EiceDRIVER™ 1ED Compact now including X3 Compact family (1ED31xx), with up to 14 A output current, 200 kV/µs CMTI
- Show system benefit of Miller clamp, separate output, active shutdown, short circuit clamping, 7-ns prop. delay matching
- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, SMPS
- The EiceDRIVER™ Enhanced X3 Analog family (1ED34xx), with DESAT (adjustable filter time), Miller Clamp, soft-off (adjustable current)
- Up to 9 A output current, 200 kV/µs CMTI, 30 ns Max. propagation delay matching, 40 V Max output supply voltage.
- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc.
- The EiceDRIVER™ X3 Compact family (1ED31xx), with up to 14 A output current, 2300 V functional isolation, 200 kV/µs CMTI
- Show system benefit of Miller clamp, separate output, active shutdown, short circuit clamping, 7-ns prop. delay matching
- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, SMPS
- The new EiceDRIVER™ X3 Digital family (1ED38xx), with I2C-configurability for DESAT, Soft-Off, UVLO, Miller clamp, two level turn off (TLTO).
- Up to 9 A output current, 200 kV/µs CMTI, 30 ns Max. propagation delay matching, 40 V Max output supply voltage.
- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc.
You will have a glimpse of the different gate driver technologies available at Infineon and their benefits.
For a better understanding we will take a look at the optimization of external gate resistors to drive MOSFETs in a given application.
With this training, you will learn how to calculate a gate resistance value for an IGBT application, how to identify suitable gate driver ICs based on peak current and power dissipation requirements, and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
Silicon Carbide MOSFETs bring a lot of opportunities to power electronics. However, how to achieve sufficient system benefits by using Silicon Carbide MOSFETs with suitable gate drivers? This training helps you to learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET; how to identify suitable gate driving ICs based on peak current and power dissipation requirements; and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
- EiceDRIVER™ isolated gate driver family use the state-of-the-art coreless transformer (CT) isolation technology
- The CT based isolated gate driver offers higher current, lower power consumption, better CMTI and best in class propagation delay matching
- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc.
