Galvanic Isolated Gate Driver
Robust, strong and precise single- and dual-channel, isolated gate driver ICs for MOSFETs, IGBTs, IGBT modules, SiC MOSFETs and GaN HEMTs
EiceDRIVER™ galvanically isolated gate drivers use the magnetically-coupled coreless transformer (CT) technology to provide signal transfer across the galvanic isolation. We offer functional, basic and reinforced isolated, UL 1577 and VDE 0884 certified products. The isolation allows very large voltage swings (e.g. ±1200 V).
Our isolated drivers incorporate most important key features and parameters for MOSFET, IGBT, IGBT modules, SiC MOSFET and GaN HEMT driving. EiceDRIVER™ are offered as industrial and as automotive qualified products.
Depending on power switch type and applications, EiceDRIVER™ galvanically isolated gate driver ICs offer short circuit protection, precise input filters, extended CMTI capability of 100 kV/μs, active Miller clamp, DESAT protection, wide output-side supply range, negative gate voltage capability, soft turn off, two level turn off, and strong robustness. The galvanically isolated gate driver ICs also provide strong, up to 10 A gate-drive currents for excellent power switching efficiencies.
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Robust integrated galvanic isolation from input to outputs, and in case of dual-channel isolated gate-driver ICs, as well as between the output channels, are important for hard-switching half-bridge configurations. Integrated reinforced input-to-output isolation is key for electrical safety, where needed. Industry leading precision timing characteristics, both across production and temperature range, enable the next level of power conversion system efficiency.
The extremely short propagation delays keep the designer’s flexibilities at the highest level, while the circuit is easy to use and the features comfortable to handle. Our products operate stable in harsh EMC environments and drive up to 300 A/1200 V IGBTs with its integrated 10 A output stage.
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