Infineon’s NEW radiation-hardened GaN transistor for extreme environments

Unlock new levels of space-grade power system efficiency with our rad hard GaN transistors

Introducing the IG1NT052N10R, a cutting-edge radiation-hardened Gallium Nitride (GaN) transistor designed specifically for space applications. Our GaN device boasts industry-leading performance and reliability in the most demanding environments, like the rest of our IR HiRel family of power products.

Depending on your specific application and mission requirements you can select from two screening levels, COTS (100 and 500 kRad) or JANS certified (500 kRad).

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radhardgan
radhardgan

Award-winning, innovative and groundbreaking technology

This new radiation hardened GaN transistor with JANS qualification was recognized among the best by the 2025 MAE Innovators Awards. Votes placed by the engineering community recognized Infineon as a Platinum, the highest level of achievement, in the Design and Engineering category. Read more.

Industry's first DLA JANS qualified rad hard GaN transistor

Unlock the full potential of your space applications with Infineon IR HiRel's cutting-edge, rad hard GaN transistors. Designed to deliver unparalleled efficiency, power density, and switching frequencies, our GaN FETs empower you to create smaller, lighter, and more reliable power management and distribution systems. With the added assurance of DLA qualification, you can trust our technology to perform in even the most demanding high-performance space environments.

2025 MAE Innovators Awards
2025 MAE Innovators Awards
2025 MAE Innovators Awards

Key features

  • Single event effect (SEE) hardened up
    to LET (GAN)1 = 70 MeV.cm2/mg (Au ion)
  • Ultra-low RDS(on)
  • Low total gate charge
  • Zero reverse recovery charge
  • Hermetically sealed ceramic package
  • Surface mount
  • Light weight
  • ESD rating: Class 1C per MIL-STD-750, Method 1020

Product summary

  • VDS max: 100 V
  • ID: 52 A
  • RDS(on) max: 6.0 mΩ
  • QG max: 13 nC
  • Size: 7.1 mm x 5.3 mm
  • REF: MIL-PRF-19500 /794

Potential applications

  • Isolated DC-DC converters
  • Point-of-load (PoL) converters for FPGA, ASIC and DSP core rails
  • Synchronous rectification
  • Motor drives

High-performance power devices for space exploration

Our rad hard GaN transistors have undergone rigorous testing for Total Ionizing Dose (TID) and Single Event Effects (SEE), ensuring they can withstand the harsh conditions of space. The three devices offer a unique combination of low RDS(on), low gate charge, and zero reverse recovery charge, minimizing power losses in switching applications such as DC-DC converters and motor control. The transistors can withstand the extreme environment of space, and are qualified based on MIL-PRF-19500.

 

Enabling high-frequency operation and high-power density

Our latest GaN power devices enable the design of high-frequency power management circuits, resulting in high-power density and reduced payload mass. GaN devices can operate at higher voltages and have a wider band gap while offering enhanced thermal stability over Si. These features make our rad hard device an ideal choice for space applications where size, weight, and power (SWaP) are critical factors.

Product nomenclature

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