Active and preferred
RoHS Compliant
Lead-free

S80KS5122GABHA020

Data Sheet
package

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S80KS5122GABHA020
S80KS5122GABHA020
Data Sheet

Product details

  • Density
    512 MBit
  • Family
    KS-2
  • Initial Access Time
    35 ns
  • Interface Bandwidth
    400 MByte/s
  • Interface Frequency (SDR/DDR) (MHz)
    - / 200
  • Interfaces
    HYPERBUS
  • Lead Ball Finish
    Sn/Ag/Cu
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage range
    1.7 V to 2 V
  • Operating Voltage
    1.8 V
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    See roadmap
  • Qualification
    Automotive
  • Technology
    HYPERRAM
Recommended
OPN
S80KS5122GABHA020
Product Status active and preferred
Infineon Package
PG-BGA-24
Package Name BGA-24 (002-15550)
Packing Size 676
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
PG-BGA-24
Package Name BGA-24 (002-15550)
Packing Size 676
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
S80KS5122GABHA020 is a 512 Mb HYPERRAM™ self-refresh DRAM with a 1.8 V HYPERBUS™ (8-bit DQ, RWDS, CS#, RESET#) for high-bandwidth memory expansion in embedded and automotive systems. It supports DDR operation up to 200 MHz (400 MBps) with 35 ns max access time, configurable linear or wrapped bursts, and hybrid sleep plus deep power down. It is in a 24-ball FBGA and is AEC-Q100 Grade 3 (-40 to 85°C).

Features

  • HyperBus interface
  • 1.7 V to 2.0 V VCC supply
  • Single or differential clock input
  • 8-bit DDR bus with RWDS strobe
  • 200 MHz maximum clock rate
  • Up to 400 MBps data throughput
  • 35 ns maximum access time tACC
  • Burst: linear or wrapped
  • Wrap bursts: 16/32/64/128 bytes
  • Interface standby ignores I/O pins
  • Active clock stop after tACC+30 ns
  • Hybrid sleep via CR1[5], data kept

Benefits

  • 400 MBps supports fast buffering
  • DDR boosts bandwidth per pin
  • 1.8 V I/O matches low-voltage SoCs
  • RWDS strobe eases timing closure
  • Linear burst fits streaming reads
  • Wrap bursts match cache line fills
  • Standby reduces idle power draw
  • Clock stop saves power on stalls
  • Hybrid sleep keeps RAM contents
  • HS entry in 3 us reduces wake cost
  • HS exit in 100 us improves response
  • Deep power down cuts leakage

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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