Please note that this is an end of life product. See newer alternative product version Please note that this is an end of life product. See newer alternative product version
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END OF LIFE
discontinued
RoHS Compliant
Lead-free

S70KL1281DABHI020

END OF LIFE
Data Sheet
package
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S70KL1281DABHI020
S70KL1281DABHI020
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Data Sheet

Product details

  • Density
    128 MBit
  • Family
    KL-1
  • Initial Access Time
    40 ns
  • Interface Bandwidth
    200 MByte/s
  • Interface Frequency (SDR/DDR) (MHz)
    - / 100
  • Interfaces
    HYPERBUS
  • Lead Ball Finish
    N/A
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage range
    2.7 V to 3.3 V
  • Operating Voltage
    3 V
  • Peak Reflow Temp
    260 °C
  • Technology
    HYPERRAM
OPN
S70KL1281DABHI020
Product Status discontinued
Infineon Package
PG-BGA-24
Package Name BGA-24 (002-15550)
Packing Size 338
Packing Type TRAY
Moisture Level N/A
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
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Product Status discontinued
Infineon Package
PG-BGA-24
Package Name BGA-24 (002-15550)
Packing Size 338
Packing Type TRAY
Moisture Level -
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
View replacement
The S70KL1281DABHI020 is a 128 Mb (16 MB) HyperRAM self-refresh DRAM with an 8-bit DDR interface for external memory expansion over a low signal-count bus. It supports up to 100 MHz clock (200 MBps) at 2.7 V to 3.6 V VCC/VCCQ, with sequential reads/writes, RWDS data strobe/mask, and configurable wrapped or linear bursts. In a 24-ball FBGA, it is rated -40 to 85°C and draws up to 400 µA standby (CS# = HIGH).

Features

  • HyperRAM low-signal-count interface
  • 8-bit DDR data bus (DQ[7:0])
  • 11/12 interface signals (VIO)
  • Up to 166 MHz clock at 1.8 V
  • Up to 100 MHz clock at 3.0 V
  • Up to 333 MBps peak bandwidth
  • RWDS strobe with mask function
  • Wrapped burst 16/32/64/128 bytes
  • Linear and hybrid burst options
  • Deep Power Down mode (DPD)
  • 1.7 V to 1.95 V supply range
  • 2.7 V to 3.6 V supply range

Benefits

  • Cuts MCU pin count vs parallel DRAM
  • DDR boosts throughput per clock
  • Simplifies routing with fewer traces
  • 166 MHz supports fast memory reads
  • 100 MHz fits 3.0 V host designs
  • 333 MBps supports rich HMI assets
  • RWDS eases timing, masks writes
  • Burst options optimize bus efficiency
  • Linear bursts fit streaming access
  • DPD reduces standby power drain
  • Wide 1.8 V supply eases power tree
  • Wide 3.0 V supply fits legacy rails

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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