Active and preferred
RoHS Compliant
Lead-free

S70FS01GSAGBHI213

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S70FS01GSAGBHI213
S70FS01GSAGBHI213

Product details

  • Density
    1 GBit
  • Family
    FS-S
  • Interface Bandwidth
    66 MByte/s
  • Interface Frequency (SDR/DDR) (MHz)
    133 / -
  • Interfaces
    Quad SPI
  • Lead Ball Finish
    Sn/Ag/Cu
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage range
    1.7 V to 2 V
  • Operating Voltage
    1.8 V
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2035
  • Qualification
    Industrial
OPN
S70FS01GSAGBHI213
Product Status active and preferred
Infineon Package
Package Name FBGA-24 (002-15078)
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
Package Name FBGA-24 (002-15078)
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
The S70FS01GSAGBHI213 is a 1 Gb (128 MB) dual-die SPI Flash memory built on 65-nm MIRRORBIT™ technology and Eclipse architecture. It supports SPI Multi-I/O with single, dual, quad, and DDR modes, up to 133 MHz clock and 80 MBps read speed. Operating at 1.7 V to 2.0 V, it meets AEC-Q100 Grade 2 (-40°C to +105°C). Hybrid and uniform sector options, robust ECC, advanced sector protection, and 20-year data retention make it ideal for reliable code storage and embedded systems.

Features

  • SPI with multi-I/O support
  • Supports clock polarity and phase modes 0, 3
  • DDR and SDR command protocols
  • 24- or 32-bit addressing options
  • Compatible with S25FL1-K, S25FL-P, S25FL-S
  • Normal, Fast, Dual, Quad, DDR Quad I/O Read
  • Burst wrap and Quad peripheral interface
  • Internal hardware ECC with single bit
  • Hybrid and uniform sector erase options
  • 100,000 program-erase cycles per sector min
  • 20 year data retention minimum
  • 1.7 V to 2.0 V single supply voltage

Benefits

  • Multi-I/O enables high data throughput
  • DDR/SDR modes offer flexible speed options
  • 24/32-bit addressing supports large designs
  • Compatibility eases migration from other SPI
  • Multiple read modes optimize performance
  • QPI mode enables fast quad data transfers
  • ECC ensures reliable data storage
  • Hybrid/uniform erase fits varied applications
  • High endurance for frequent updates
  • Long retention secures critical data
  • Low voltage reduces power consumption
  • Wide temp range supports harsh environments

Applications

Documents

Design resources

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }