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IRHNS9A3264

Data Sheet
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IRHNS9A3264
IRHNS9A3264
Data Sheet

Product details

  • Die Size
    6
  • ESD Class
    3B
  • Generation
    R9
  • ID (@25°C) max
    82 A
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    SupIR-SMD
  • Polarity
    N
  • QG
    165 nC
  • QPL Part Number
    2N7658U2A
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    17 mΩ
  • TID max
    300 Krad(Si)
  • VBRDSS
    250 V
  • VF max
    1.2 V
Recommended
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
R9 technology is the basis for this rad hard 250V, 82A N-channel MOSFET for space applications with improved SEE immunity and electrical performance up to 300krad(Si) TID. The IRHNS9A3264's low RDS(on) and fast switching times increase power density and reduce power losses in high-speed switching applications. In a SupIR-SMD package, it retains proven MOSFET advantages like voltage control, fast switching, and electrical parameter stability.

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