IRHNA6S7160SCS

Data Sheet

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IRHNA6S7160SCS
IRHNA6S7160SCS
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    6
  • ESD Class
    Class 3A
  • Generation
    R6
  • ID (@100°C) max
    56 A
  • ID (@25°C) max
    56 A
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    SMD-2
  • Polarity
    N
  • QG
    170 nC
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    10 mΩ
  • TID max
    100 Krad(Si)
  • VBRDSS
    100 V
  • VF max
    1.2 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
The IRHNA6S7160SCS R6 N-channel MOSFET is a 100V, 56A, radiation-hardened device in a SMD-2 package. With electrical performance up to 100krad(Si) TID and LET of 90 MeV·cm2/mg, it is designed for space applications. Low RDS(on) and gate charge reduce power losses in DC-DC converters and motor controllers. Voltage control, fast switching, and temperature stability make this MOSFET ideal in high-reliability applications.

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