IRF9Z24NS

-55V Single P-Channel IR MOSFET in a D2-Pak package

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

IRF9Z24NS
IRF9Z24NS

Product details

  • ID (@25°C) max
    -12 A
  • Moisture Sensitivity Level
    1
  • Mounting
    SMD
  • Package
    D2PAK (TO-263)
  • Polarity
    P
  • Ptot max
    45 W
  • Qgd
    6.7 nC
  • QG (typ @10V)
    12.7 nC
  • RDS (on) (@10V) max
    175 mΩ
  • RthJC max
    3.3 K/W
  • Tj max
    175 °C
  • VDS max
    -55 V
  • VGS(th) range
    -2 V to -4 V
  • VGS(th)
    -3 V
  • VGS max
    20 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Features

  • Planar cell structure for wide SOA
  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • Industry standard surface-mount power package
  • High-current rating

Benefits

  • Increased ruggedness
  • Wide availability from distribution partners
  • Industry standard qualification level
  • Standard pinout allows for drop in replacement
  • High current carrying capability

Applications

Documents

Design resources

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }