Active and preferred
RoHS Compliant
Lead-free

FM28V020-SGTR

Data Sheet
package
ea.
in stock

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FM28V020-SGTR
FM28V020-SGTR
ea.
Data Sheet

Product details

  • Density
    256 kBit
  • Family
    Parallel FRAM
  • Interfaces
    Parallel
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage (VCCQ) range
    2 V to 3.6 V
  • Operating Voltage range
    2 V to 3.6 V
  • Organization (X x Y)
    32Kb x 8
  • Peak Reflow Temp
    260 °C
  • Qualification
    Industrial
  • Speed
    70 ns
Recommended
OPN
FM28V020-SGTR
Product Status active and preferred
Infineon Package
PG-DSO-28
Package Name SOIC-28 (51-85026)
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-DSO-28
Package Name SOIC-28 (51-85026)
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The FM28V020-SGTR is a 256-Kbit (32K × 8) parallel ferroelectric RAM (F-RAM) in a 28-pin SOIC package, offering nonvolatile data retention up to 151 years and endurance of 100 trillion read/write cycles. It operates from 2.0 V to 3.6 V over –40°C to +85°C, with 70 ns access and 140 ns cycle time. SRAM compatibility, page mode operation, and low active (5 mA typ) and standby (90 μA typ) currents make it ideal for frequent, rapid, and reliable nonvolatile memory storage.

Features

  • 256-Kbit nonvolatile F-RAM memory
  • 32K × 8 parallel organization
  • 151-year data retention at 65°C
  • 100 trillion (10¹⁴) read/write cycles
  • NoDelay™ instant writes
  • SRAM compatible pinout
  • 70-ns access, 140-ns cycle time
  • Low power: 5 mA active, 90 µA standby
  • VDD operation: 2.0 V to 3.6 V
  • Data bus HI-Z when not accessed
  • Page mode operation for fast access
  • Monolithic reliability, no battery needed

Benefits

  • Data survives power loss for decades
  • Virtually unlimited write endurance
  • No write delays, instant data storage
  • Drop-in SRAM replacement simplifies design
  • Fast access boosts system performance
  • Low power saves energy in applications
  • Operates across common voltage rails
  • Bus HI-Z reduces system power spikes
  • Page mode speeds up sequential access
  • No battery maintenance required
  • Reliable in harsh environments
  • Fewer design steps, no rework needed

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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