Active and preferred
RoHS Compliant
Lead-free

FM28V020-SG

Data Sheet
package
ea.
in stock

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FM28V020-SG
FM28V020-SG
ea.
Data Sheet

Product details

  • Density
    256 kBit
  • Family
    Parallel FRAM
  • Interfaces
    Parallel
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage (VCCQ) range
    2 V to 3.6 V
  • Operating Voltage range
    2 V to 3.6 V
  • Organization (X x Y)
    32Kb x 8
  • Peak Reflow Temp
    260 °C
  • Qualification
    Industrial
  • Speed
    70 ns
Recommended
OPN
FM28V020-SG
Product Status active and preferred
Infineon Package
PG-DSO-28
Package Name SOIC-28 (51-85026)
Packing Size 540
Packing Type TUBE
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-DSO-28
Package Name SOIC-28 (51-85026)
Packing Size 540
Packing Type TUBE
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The FM28V020-SG is a 256-Kbit (32K × 8) parallel ferroelectric RAM (F-RAM) in a 28-pin SOIC package, providing nonvolatile data storage with 151-year retention at 65°C and 100 trillion (10¹⁴) read/write cycles. Operating from 2.0 V to 3.6 V across –40°C to +85°C, it features 70-ns access time, SRAM compatibility, NoDelay™ writes, and low power consumption, making it ideal for frequent nonvolatile memory updates in industrial and data logging applications.

Features

  • 256-Kbit nonvolatile F-RAM memory
  • 32K × 8 parallel organization
  • 151-year data retention at 65°C
  • 100 trillion (10¹⁴) read/write cycles
  • NoDelay™ instant writes
  • SRAM compatible pinout
  • 70-ns access, 140-ns cycle time
  • Low power: 5 mA active, 90 µA standby
  • VDD operation: 2.0 V to 3.6 V
  • Data bus HI-Z when not accessed
  • Page mode operation for fast access
  • Monolithic reliability, no battery needed

Benefits

  • Data survives power loss for decades
  • Virtually unlimited write endurance
  • No write delays, instant data storage
  • Drop-in SRAM replacement simplifies design
  • Fast access boosts system performance
  • Low power saves energy in applications
  • Operates across common voltage rails
  • Bus HI-Z reduces system power spikes
  • Page mode speeds up sequential access
  • No battery maintenance required
  • Reliable in harsh environments
  • Fewer design steps, no rework needed

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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