Active and preferred
RoHS Compliant
Lead-free

FM25L16B-GTR

High-Density 16 kBit SPI F-RAM with Industrial Qualification and Wide Operating Range
Data Sheet
package
ea.
in stock

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FM25L16B-GTR
FM25L16B-GTR
ea.
Data Sheet

Product details

  • Density
    16 kBit
  • Frequency
    20 MHz
  • Interfaces
    SPI
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage (VCCQ) range
    2.7 V to 3.6 V
  • Operating Voltage range
    2.7 V to 3.6 V
  • Organization (X x Y)
    2Kb x 8
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2033
  • Qualification
    Industrial
  • Speed
    0 ns
Recommended
OPN
FM25L16B-GTR
Product Status active and preferred
Infineon Package
PG-DSO-8
Package Name SOIC-8 (51-85066)
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-DSO-8
Package Name SOIC-8 (51-85066)
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The FM25L16B-GTR is a 16-Kbit (2K × 8) serial ferroelectric random access memory (F-RAM) with a high-speed SPI interface up to 20 MHz. It delivers virtually unlimited endurance with 100 trillion (10¹⁴) read/write cycles and 151-year data retention at 65°C. Operating from 2.7 V to 3.6 V across -40°C to +85°C, it features NoDelay™ writes, advanced write protection, and low power consumption.

Features

  • 16-Kbit ferroelectric RAM, 2K x 8
  • 100 trillion (1e14) read/write cycles
  • 151-year data retention at 65°C
  • NoDelay™ instant writes, no write delay
  • Up to 20 MHz SPI interface
  • Supports SPI mode 0 and mode 3
  • Hardware and software write protection
  • Block protection for 1/4, 1/2, or full array
  • Low power: 200 μA active, 3 μA standby
  • Operates from 2.7 V to 3.6 V supply
  • Industrial temp range: –40°C to +85°C
  • Input/output capacitance: 6/8 pF max

Benefits

  • Reliable nonvolatile memory for critical data
  • Eliminates write delays for fast operation
  • High endurance supports frequent data logging
  • 151-year retention prevents data loss
  • Drop-in replacement for serial EEPROM/flash
  • 20 MHz SPI enables high-speed access
  • Flexible protection guards against overwrites
  • Low power extends battery/device life
  • Wide voltage range suits many designs
  • Operates reliably in harsh environments
  • Simple integration with standard SPI
  • Small capacitance supports fast signal timing

Documents

Documents

Design resources

Partner solutions

Developer community

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