Active and preferred
RoHS Compliant
Lead-free

FM24C16B-G

Data Sheet
package
ea.
in stock

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FM24C16B-G
FM24C16B-G
ea.
Data Sheet

Product details

  • Density
    16 kBit
  • Frequency
    1 MHz
  • Interfaces
    I2C
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage (VCCQ) range
    4.5 V to 5.5 V
  • Operating Voltage range
    4.5 V to 5.5 V
  • Organization (X x Y)
    2Kb x 8
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2033
  • Qualification
    Industrial
  • Speed
    0 ns
Recommended
OPN
FM24C16B-G
Product Status active and preferred
Infineon Package
PG-DSO-8
Package Name SOIC-8 (51-85066)
Packing Size 2910
Packing Type TUBE
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-DSO-8
Package Name SOIC-8 (51-85066)
Packing Size 2910
Packing Type TUBE
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The FM24C16B-G is a 16-Kbit (2K × 8) nonvolatile F-RAM memory with an I2C interface, supporting 100 trillion read/write cycles and 151-year data retention. Operating from 4.5 V to 5.5 V over –40°C to +85°C, it features low active (100 μA at 100 kHz) and standby (4 μA typ) currents. The 8-pin SOIC package is RoHS compliant, making it ideal for data logging, industrial control, and applications requiring frequent or rapid writes.

Features

  • 16-Kbit F-RAM organized as 2K × 8
  • 100 trillion (10¹⁴) read/write cycles
  • 151-year data retention at 65°C
  • NoDelay™ writes, immediate data storage
  • I2C interface up to 1 MHz
  • Low active current: 100 μA at 100 kHz
  • 4 μA typical standby current
  • Wide VDD: 4.5 V to 5.5 V
  • Industrial temp: –40°C to +85°C
  • Write protect pin for full memory
  • ESD protection: 2 kV (HBM), 500 V (CDM)
  • Latch-up current > 140 mA

Benefits

  • Enables frequent, rapid data logging
  • Eliminates write delays for real-time use
  • Reliable storage for over a century
  • Drop-in replacement for I2C EEPROM
  • Reduces power consumption in operation
  • Minimizes standby energy drain
  • Operates in harsh industrial conditions
  • Protects data from accidental writes
  • Withstands high ESD/latch-up events
  • Supports legacy 100/400 kHz I2C systems
  • No polling needed after writes
  • Suitable for long-life applications

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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