Active and preferred
RoHS Compliant
Lead-free

FM1808B-SG

Data Sheet
package
ea.
in stock

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FM1808B-SG
FM1808B-SG
ea.
Data Sheet

Product details

  • Density
    256 kBit
  • Family
    Parallel FRAM
  • Interfaces
    Parallel
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage (VCCQ) range
    4.5 V to 5.5 V
  • Operating Voltage range
    4.5 V to 5.5 V
  • Organization (X x Y)
    32Kb x 8
  • Peak Reflow Temp
    260 °C
  • Qualification
    Industrial
  • Speed
    70 ns
Recommended
OPN
FM1808B-SG
Product Status active and preferred
Infineon Package
PG-DSO-28
Package Name SOIC-28 (51-85026)
Packing Size 540
Packing Type TUBE
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-DSO-28
Package Name SOIC-28 (51-85026)
Packing Size 540
Packing Type TUBE
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The FM1808B-SG is a 256-Kbit (32 K × 8) parallel ferroelectric RAM (F-RAM) in a 28-pin SOIC package, offering nonvolatile storage with SRAM and EEPROM compatibility. It operates from 4.5 V to 5.5 V across –40°C to +85°C, features 70-ns access time, 100 trillion cycle endurance, and 151-year data retention at 65°C.

Features

  • 256-Kbit F-RAM, 32 K × 8 organization
  • 100 trillion (10¹⁴) read/write cycles
  • 151-year data retention at 65°C
  • NoDelay™ writes, SRAM-compatible timing
  • 70-ns access time, 130-ns cycle time
  • Low power: 15 mA active, 50 μA standby
  • 4.5 V to 5.5 V supply voltage
  • Industrial temp range: –40°C to +85°C
  • SRAM and EEPROM compatible pinout
  • Input/output capacitance max 8 pF
  • Monolithic reliability, no battery required
  • Resistant to negative voltage undershoots

Benefits

  • Enables frequent, rapid data logging
  • Eliminates battery backup maintenance
  • Data safe for 151 years at 65°C
  • Drop-in replacement for SRAM/EEPROM
  • Fast writes reduce system latency
  • Low power extends battery/system life
  • Reliable in industrial environments
  • Simple integration, standard pinout
  • Withstands shock, vibration, moisture
  • No data loss from power interruptions
  • No wear-out concerns for write cycles
  • Robust operation against voltage dips

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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