Active and preferred
RoHS Compliant
Lead-free

CY15V104QSN-108SXIT

Data Sheet
package

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CY15V104QSN-108SXIT
CY15V104QSN-108SXIT
Data Sheet

Product details

  • Density
    4 MBit
  • Family
    Excelon™
  • Frequency
    108 MHz
  • Interfaces
    QSPI
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage range
    1.71 V to 1.89 V
  • Operating Voltage (VCCQ) range
    1.71 V to 1.89 V
  • Organization (X x Y)
    512Kb x 8
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2033
  • Qualification
    Industrial
  • Speed
    0 ns
Recommended
OPN
CY15V104QSN-108SXIT
Product Status active and preferred
Infineon Package
PG-DSO-8
Package Name SOIC-8 (001-85261)
Packing Size 2000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
PG-DSO-8
Package Name SOIC-8 (001-85261)
Packing Size 2000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
The CY15V104QSN-108SXIT is a 4-Mbit EXCELON™ Ultra ferroelectric RAM (F-RAM) with 512K × 8 organization, supporting quad SPI up to 108 MHz SDR and 54 MHz DDR. Operating from 1.71 V to 1.89 V over -40°C to +85°C, it delivers virtually unlimited endurance of 100 trillion cycles and 151-year data retention. Features include instant non-volatile writes, advanced ECC and CRC, and low standby current of 110 µA, ideal for frequent or rapid-write industrial applications.

Features

  • 4-Mbit F-RAM, 512K × 8 organization
  • Virtually unlimited 10^14 read/write cycles
  • 151-year data retention
  • Quad, dual, and extended SPI protocols
  • Up to 108 MHz SPI SDR, 54 MHz SPI DDR
  • Execute-in-place (XIP) support
  • Hardware and software write protection
  • Built-in ECC and CRC for data integrity
  • Unique device and serial number
  • Dedicated 256-byte special sector
  • Low active (10 mA) and standby (110 µA)
  • Deep power-down and hibernate modes

Benefits

  • Reliable data even after 151 years
  • No write delays, instant non-volatile storage
  • Frequent writes without wear-out risk
  • Fast data access with 108 MHz SPI
  • Flexible interface for easy integration
  • Enhanced data integrity with ECC/CRC
  • Secure operation with write protection
  • Device traceability via unique ID
  • Special sector survives reflow cycles
  • Low power for energy-sensitive designs
  • Hibernate mode extends battery life
  • XIP enables direct code execution

Documents

Documents

Design resources

Partner solutions

Developer community

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