Active and preferred
RoHS Compliant
Lead-free

CY15E004J-SXET

Data Sheet
package

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

CY15E004J-SXET
CY15E004J-SXET
Data Sheet

Product details

  • Density
    4 kBit
  • Frequency
    3.4 MHz
  • Interfaces
    I2C
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature range
    -40 °C to 125 °C
  • Operating Voltage (VCCQ) range
    4.5 V to 5.5 V
  • Operating Voltage range
    4.5 V to 5.5 V
  • Organization (X x Y)
    0.5Kb x 8
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2033
  • Qualification
    Automotive(E)
  • Speed
    0 ns
Recommended
OPN
CY15E004J-SXET
Product Status active and preferred
Infineon Package
PG-DSO-8
Package Name SOIC-8 (51-85066)
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
PG-DSO-8
Package Name SOIC-8 (51-85066)
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
The CY15E004J-SXET is a 4-Kbit (512 × 8) automotive-grade F-RAM with 10 trillion read/write cycles and 121-year data retention at 85°C. It operates from 4.5 V to 5.5 V with 250 μA active current at 100 kHz and 10 μA standby. Featuring a high-reliability ferroelectric process, I2C up to 1 MHz, and fast NoDelay™ writes, it is AEC-Q100 Grade 1 qualified for –40°C to +125°C, ideal for automotive and industrial nonvolatile memory applications.

Features

  • 4-Kbit nonvolatile F-RAM, 512 × 8
  • 10 trillion (10¹³) read/write endurance
  • 121-year data retention
  • NoDelay™ writes, immediate data storage
  • Up to 1 MHz I2C serial interface
  • Supports 100 kHz, 400 kHz I2C timings
  • 250 μA active current at 100 kHz
  • 40 μA typical standby current
  • VDD operation: 4.5 V to 5.5 V
  • Operating temp: –40°C to +125°C
  • Human Body Model ESD: 2 kV
  • Latch-up current immunity >140 mA

Benefits

  • Reliable data even after power loss
  • Enables frequent, rapid data logging
  • 121-year retention for long-term storage
  • No write delays, faster system response
  • Drop-in replacement for I2C EEPROM
  • Flexible for legacy and new I2C designs
  • Low active current reduces power use
  • Standby mode minimizes energy drain
  • Wide VDD for robust system design
  • Operates in harsh temperature ranges
  • ESD/latch-up immunity improves reliability
  • High endurance reduces maintenance

Documents

Documents

Design resources

Partner solutions

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }