Please note that this is an end of life product. See newer alternative product version Please note that this is an end of life product. See newer alternative product version
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END OF LIFE
discontinued
RoHS Compliant

CY15B102N-ZS60XA

END OF LIFE
Data Sheet
package
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CY15B102N-ZS60XA
CY15B102N-ZS60XA
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Data Sheet

Product details

  • Density
    2048 kBit
  • Family
    Parallel FRAM
  • Interfaces
    Parallel
  • Lead Ball Finish
    Ni/Pd/Au
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage range
    2 V to 3.6 V
  • Operating Voltage (VCCQ) range
    2 V to 3.6 V
  • Organization (X x Y)
    128Kb x 16
  • Peak Reflow Temp
    260 °C
  • Qualification
    Automotive(A)
  • Speed
    60 ns
OPN
CY15B102N-ZS60XA
Product Status discontinued
Infineon Package
PG-TSOP-44
Package Name TSOP-II-44 (51-85087)
Packing Size 1350
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
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Product Status discontinued
Infineon Package
PG-TSOP-44
Package Name TSOP-II-44 (51-85087)
Packing Size 1350
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
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The CY15B102N-ZS60XA is a 2-Mbit (128K × 16) automotive F-RAM™ memory, providing nonvolatile storage with 100 trillion read/write endurance and 151-year data retention. Operating from 2.0 V to 3.6 V across –40°C to +85°C, it delivers 60-ns access and 30-ns page-mode cycle times. Designed as a drop-in SRAM replacement, it features low active current. The 44-pin TSOP-II package is RoHS-compliant and resists moisture, shock, and vibration for automotive and industrial systems.

Features

  • 2-Mbit F-RAM, 128K × 16 organization
  • 100 trillion (1e14) read/write endurance
  • 151-year data retention at 65°C
  • NoDelay™ write technology
  • Page-mode operation, 30-ns cycle time
  • SRAM compatible, 128K × 16 pinout
  • Software-programmable block write-protect
  • Active current 7 mA (typ), standby 120 μA
  • Low-voltage operation: VDD = 2.0 V to 3.6 V
  • Sleep mode for lowest supply current
  • Monolithic reliability, high-reliability
  • True drop-in replacement for SRAM

Benefits

  • Enables frequent, rapid nonvolatile writes
  • Eliminates battery-backed SRAM concerns
  • Retains data for 151 years, no refresh needed
  • NoDelay™ writes reduce system latency
  • Page mode boosts throughput, 30-ns cycles
  • Easy SRAM replacement, no redesign required
  • Write-protect prevents accidental data loss
  • Low power cuts energy consumption
  • Operates from 2.0 V to 3.6 V supply
  • Sleep mode saves power in standby
  • High reliability for demanding applications
  • Monolithic design simplifies integration

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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