Active and preferred
RoHS Compliant
Lead-free

CY14V116N-BZ30XIT

Data Sheet
package

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

CY14V116N-BZ30XIT
CY14V116N-BZ30XIT
Data Sheet

Product details

  • Density
    16 MBit
  • Interfaces
    Parallel
  • Lead Ball Finish
    Sn/Ag/Cu
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage range
    2.7 V to 3.6 V
  • Organization (X x Y)
    1Mb x 16
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2031
  • Qualification
    Industrial
  • Speed
    30 ns
Recommended
OPN
CY14V116N-BZ30XIT
Product Status active and preferred
Infineon Package
PG-BGA-165
Package Name FBGA-165 (51-85195)
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
PG-BGA-165
Package Name FBGA-165 (51-85195)
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
The CY14V116N-BZ30XIT is a 16-Mbit (1024K × 16) nvSRAM that combines fast SRAM with QuantumTrap nonvolatile storage in each cell. It supports hands-off AutoStore on power-down using a small VCAP capacitor, plus hardware or software STORE/RECALL control. Operates from 2.7 V to 3.6 V core and 1.65 V to 1.95 V I/O over -40°C to 85°C in a 165-ball FBGA, with 30 ns access time and 20-year retention.

Features

  • 16-Mbit nvSRAM (1024K × 16)
  • QuantumTrap NVM in each cell
  • AutoStore on power-down via VCAP
  • STORE via HSB pin or software seq
  • RECALL on power-up or software seq
  • Parallel STORE/RECALL of all cells
  • R/W blocked during STORE/RECALL
  • Byte enables BHE/BLE for 8-bit ops
  • VCC core supply 2.7 V to 3.6 V
  • VCCQ I/O supply 1.65 V to 1.95 V
  • 10 µA sleep mode current
  • 20-year data retention

Benefits

  • Retains data through power loss
  • No battery for nonvolatile backup
  • Simple power-down data protection
  • Flexible save/restore control options
  • Fast restart with power-up RECALL
  • Deterministic STORE/RECALL behavior
  • Supports 8-bit or 16-bit bus designs
  • Low sleep current cuts standby power
  • Separate VCC/VCCQ eases level shift
  • High endurance for frequent saves
  • Parallel transfer minimizes downtime
  • Avoids STORE unless SRAM was written

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }