CY14V101QS-SE108XQ

Data Sheet

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CY14V101QS-SE108XQ
CY14V101QS-SE108XQ
Data Sheet

Product details

  • Density
    1024 kBit
  • Frequency
    108 MHz
  • Interfaces
    QSPI
  • Lead Ball Finish
    Ni/Pd/Au
  • Operating Temperature range
    -40 °C to 105 °C
  • Operating Voltage range
    2.7 V to 3.6 V
  • Organization (X x Y)
    128Kb × 8
  • Peak Reflow Temp
    260 °C
  • Qualification
    Industrial(Q)
  • Speed
    0 ns
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
CY14V101QS-SE108XQ is a 1-Mbit (128K × 8) Quad SPI nvSRAM that combines SRAM with SONOS nonvolatile cells. It supports SPI/DPI/QPI with 108 MHz clock and up to 54 MBps read/write. AutoStore saves SRAM to nonvolatile memory at power-down and RECALL restores on power-up; STORE/RECALL can also be triggered by instruction or HSB pin. It runs on 2.7 V to 3.6 V VCC with 1.71 V to 2.0 V I/O, -40°C to 105°C.

Features

  • 1-Mbit (128K × 8) nvSRAM array
  • SPI/DPI/QPI interface up to 108 MHz
  • 40 MHz READ with 0-cycle latency
  • Read and write bandwidth 54 MBps
  • SPI modes 0 and 3 (CPOL/CPHA)
  • Burst mode reads with rollover
  • Burst mode writes with rollover
  • AutoStore on power-down via VCAP
  • Auto RECALL on power-up
  • Software STORE/RECALL instructions
  • Hardware STORE and status via HSB
  • 20-year retention, 1M STORE cycles

Benefits

  • SRAM-speed access with NV safety
  • 108 MHz enables fast data transfer
  • 0-latency reads reduce wait states
  • 54 MBps supports high throughput
  • Easy host timing with SPI 0/3
  • Burst reads cut command overhead
  • Burst writes speed block updates
  • AutoStore protects on power loss
  • Power-up RECALL restores data fast
  • Software save/restore simplifies FW
  • HSB pin enables HW-managed backup
  • Long retention reduces service needs

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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