CY14E256LA-SZ45XI

Data Sheet

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CY14E256LA-SZ45XI
CY14E256LA-SZ45XI
Data Sheet

Product details

  • Density
    256 kBit
  • Interfaces
    Parallel
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage (VCCQ) max
    5.5 V
  • Operating Voltage range
    4.5 V to 5.5 V
  • Organization (X x Y)
    32Kb x 8
  • Peak Reflow Temp
    260 °C
  • Qualification
    Industrial
  • Speed
    45 ns
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
CY14E256LA-SZ45XI is a 256-Kbit (32 K × 8) parallel nvSRAM combining fast SRAM with QuantumTrap nonvolatile storage per cell. It runs from a single 4.5 V to 5.5 V supply over −40°C to +85°C and supports 45 ns access. Data is automatically stored on power-down using a 61 µF to 180 µF VCAP capacitor, with software- or pin-initiated STORE/RECALL, 1M STORE cycles, and 20-year retention.

Features

  • 32 K × 8 nvSRAM array
  • QuantumTrap nonvolatile cells
  • AutoStore on power-down (VCAP)
  • Software STORE via 6-read sequence
  • Software RECALL via 6-read sequence
  • HSB pin: HW STORE request
  • HSB open-drain busy indicator
  • Single-supply 4.5 V to 5.5 V
  • VCAP capacitor 61 µF to 180 µF
  • Low-V inhibits write and STORE
  • 20-year data retention
  • 1,000 K STORE cycle endurance

Benefits

  • Retains data through power loss
  • Eliminates battery-backed SRAM
  • AutoStore saves state hands-free
  • STORE/RECALL via simple MCU reads
  • HSB busy flag avoids bus conflicts
  • Works from common 5 V rails
  • Defined VCAP range speeds design-in
  • Low-V lockout prevents corruption
  • Endurance suits frequent data logs
  • Long retention supports servicing
  • Nonvolatile backup without firmware
  • Reduces downtime after power return

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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