Please note that this is an end of life product. See newer alternative product version Please note that this is an end of life product. See newer alternative product version
END OF LIFE
discontinued
RoHS Compliant

CY14B116L-ZS25XIT

END OF LIFE
Data Sheet
package

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CY14B116L-ZS25XIT
CY14B116L-ZS25XIT
Data Sheet

Product details

  • Density
    16384 kBit
  • Interfaces
    Parallel
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage (VCCQ) max
    3.6 V
  • Operating Voltage range
    2.7 V to 3.6 V
  • Organization (X x Y)
    2Mb x 8
  • Peak Reflow Temp
    260 °C
  • Qualification
    Industrial
  • Speed
    25 ns
OPN
CY14B116L-ZS25XIT
Product Status discontinued
Infineon Package
PG-TSOP-44
Package Name TSOP-II-44 (51-85087)
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status discontinued
Infineon Package
PG-TSOP-44
Package Name TSOP-II-44 (51-85087)
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
CY14B116L-ZS25XIT is a 16-Mbit parallel nvSRAM (2048K × 8) combining SRAM with QuantumTrap nonvolatile cells. It operates from 2.7 V to 3.6 V over –40°C to +85°C, with 25 ns access time in a 44-pin TSOP II. AutoStore on power-down uses a 19.8 µF to 82.0 µF VCAP capacitor; STORE/RECALL can be initiated by software or the HSB pin. Rated for 20-year data retention and 1,000,000 STORE cycles.

Features

  • 16-Mbit nvSRAM, SRAM interface
  • AutoStore on power-down via VCAP
  • STORE via software or HSB pin
  • RECALL via software or power-up
  • QuantumTrap nonvolatile cell tech
  • 1M STORE cycles to QuantumTrap
  • 20-year data retention
  • Infinite SRAM R/W/RECALL cycles
  • Sleep mode current 10 µA max
  • Power-up RECALL duration 30 ms
  • STORE cycle duration 8 ms
  • VCAP capacitor 19.8 µF to 82 µF

Benefits

  • Retains data through power loss
  • No battery needed for retention
  • Flexible save/restore control
  • Fast restart after power returns
  • High endurance for frequent saves
  • No wear-out from SRAM writes
  • Long service life for stored data
  • Sleep cuts idle power drain
  • 10 µA sleep suits low-power systems
  • Predictable shutdown save time
  • Simple hold-up cap eases design
  • Blocks access during STORE/RECALL

Documents

Documents

Design resources

Partner solutions

Developer community

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