Active and preferred
RoHS Compliant

CY14B101Q2-LHXI

ea.
in stock

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CY14B101Q2-LHXI
CY14B101Q2-LHXI
ea.

Product details

  • Density
    1 MBit
  • Frequency
    40 MHz
  • Interfaces
    SPI
  • Lead Ball Finish
    Ni/Pd/Au
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage (VCCQ) max
    3.6 V
  • Operating Voltage range
    2.7 V to 3.6 V
  • Organization (X x Y)
    128Kb x 8
  • Peak Reflow Temp
    260 °C
  • Qualification
    Industrial
  • Speed
    0 ns
OPN
CY14B101Q2-LHXI
Product Status active and preferred
Infineon Package
Package Name DFN-8 (001-50671)
Packing Size 1540
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead-free No
Halogen Free No
RoHS Compliant Yes
Infineon stock last updated:
ea. in stock

Product Status
Active
Infineon Package
Package Name DFN-8 (001-50671)
Packing Size 1540
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
CY14B101Q2-LHXI is a 1-Mbit (128K × 8) SPI nvSRAM that combines SRAM with QuantumTrap nonvolatile storage for instant data retention. It supports 40 MHz SPI (modes 0 and 3) and performs automatic STORE on power-down using an external 61 µF to 180 µF VCAP capacitor, with RECALL on power-up. It is rated for 1,000K STORE cycles and 20-year data retention, operating from 2.7 V to 3.6 V over -40°C to 85°C in an 8-pin DFN.

Features

  • 1-Mbit nvSRAM, 128K × 8 array
  • QuantumTrap nonvolatile cells
  • AutoStore on power-down
  • Software STORE via SPI command
  • RECALL on power-up
  • Software RECALL via SPI command
  • SPI clock up to 40 MHz
  • Supports SPI modes 0 and 3
  • 2.7 V to 3.6 V VCC operation
  • Avg active current 10 mA at 40 MHz
  • 20-year data retention
  • 1,000 K nonvolatile STORE cycles

Benefits

  • Retains data with no battery
  • Saves data at unexpected power loss
  • Software control reduces extra pins
  • Restores last state after reset
  • 40 MHz SPI speeds system transfers
  • Compatible with common SPI hosts
  • Fits standard 3 V supply rails
  • 10 mA active cuts power draw
  • 20-year retention lowers service cost
  • High STORE endurance for data logs
  • NV + SRAM integration reduces BOM
  • Write protection prevents corruption

Documents

Design resources

Developer community

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