OptiMOS™ linear FET

Combining low RDS(on) with wide safe operating area (SOA)

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Overview

Infineon's OptiMOS™ Linear FET helps you avoid the compromise between on-state resistance (RDS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. The OptiMOS™ Linear FET revolutionary approach offers the state-of-the-art RDS(on) of a trench MOSFET together with the wide safe operating area (SOA) of a classic planar MOSFET.

Key Features

  • Wide safe operating area (SOA)
  • Rugged linear operation
  • Low RDS(on)
  • Low conduction losses
  • High pulse and continuous current
  • Multiple packages available

Products

About

Features, benefits, & applications

The OptiMOS™ Linear FET is the first generation of SOA optimized devices that focus on eliminating the trade-off between robustness in SOA and RDS(on).

It is available in 60 V, 80 V, 100 V and 150 V and package offerings include  D2PAK, D2PAK-7pin and TO-Leadless (TOLL). 

Key features:

  • Wide safe operating area (SOA)
  • Low RDS(on)
  • High max. pulse current and continuous pulse current
  • Multiple packages: D2PAK, D2PAK 7-pin, TOLL

Key benefits:

  • Rugged linear mode operation
  • Low conduction losses
  • Higher in-rush current enabled for faster start-up and shorter down time
  • Compatible footprint for drop-in replacement

Key applications:

  • Telecom - hot-swap control
  • Server - hot-swap control
  • Battery management (BMS) – battery protection
  • Power over ethernet (PoE) – port MOSFET
Overview

The OptiMOS™ 5 Linear FET 2 is the latest addition to Infineon's Linear FET family. Like the OptiMOS™ Linear FET, it features wide SOA and lowest RDS(on) in the same device. Compared to the previous generation it features improvements in SOA, leakage current, an optimized transfer characteristic to improve current sharing and the up to 13% lower RDS(on) at higher driving voltages.

Additionally, it is available in a wide package selection featuring top side cooling capability offered in the TO-Leaded top-side (TOLT).  

This makes the OptiMOS™ 5 Linear FET 2 an ideal choice in Hot-swap systems where high power density and high single MOSFET SOA are of importance. In battery protection which can be found in a wide range of applications the OptiMOS™ 5 Linear FET 2 shines with its high current carrying cabability, improved paralelling compared to OptiMOS™ 5 type of technologies and wide SOA to withstand high short circuit currents. 

The family is offered in 100 V and available packages include TO-Leadless (TOLL), TO-Leaded top-side (TOLT), D2PAK, D2PAK-7pin, SuperSO8 (5x6), PQFN 3.3x3.3, and mTOLG (8x8).

Features, benefits, applications

Key features:

  • Wide safe operating area (SOA)
  • Low RDS(on)
  • Lower IGSS compared to Linear FET
  • Optimized transfer characteristic

Key benefits:

  • Rugged linear mode operation
  • Low condition losses
  • Improved gate driver compatibility
  • Better current sharing

Key applications:

Overview

To keep-up with the growing power and reliability needs of the AI server market, the hot-swap controllers and Hot-swap MOSFETs are also evolving. Whereas the new generation of OptiMOS™ 5 Linear FET 2 sets new benchmarks in terms of power density and SOA, the digital hot-swap controllers are also evolving. One of the most notable evolutions of the controller is the ability to program the entire SOA profile of the FET, ensuring that the FET stays within its safe operating region at all times, which improves the reliability and lifetime of the overall system.

Infineon’s XDP710-002 Hot-Swap-Controller is able to drive a single or multiple parallel N-channel MOSFETs and is backward compatible to XDP710-001 with improved and enhanced features. Key features of the XDP710-002 include high-precision AFE, extensive variety of system warnings and protections, high-speed communication via PMBus to main CPU, reset, shutdown, retry and digital SOA control gate driver and charge pump for a controlled turn-ON and safe operation.

4 kW hot-swap solution example

An example of a 4 kW hot-swap solution is shown in the document linked below which has been used in power delivery boards. The solution consists of four OptiMOS™  5 Linear FET 2 IPT017N10NM5LF2 FETs and a XDP™ XDP710-002 hot-swap controller. The region of operation for this board is in the voltage range from 40 V to 60 V.

Hence, the nominal load current for 4000 W will be 4000/40 = 100 A, which is why four FETs were selected to be operated in parallel for this design, after thermal calculations. The SOA profile of the FET at 95°C is programmed into the controller.

Learn more about this application

Features, benefits, & applications

The OptiMOS™ Linear FET is the first generation of SOA optimized devices that focus on eliminating the trade-off between robustness in SOA and RDS(on).

It is available in 60 V, 80 V, 100 V and 150 V and package offerings include  D2PAK, D2PAK-7pin and TO-Leadless (TOLL). 

Key features:

  • Wide safe operating area (SOA)
  • Low RDS(on)
  • High max. pulse current and continuous pulse current
  • Multiple packages: D2PAK, D2PAK 7-pin, TOLL

Key benefits:

  • Rugged linear mode operation
  • Low conduction losses
  • Higher in-rush current enabled for faster start-up and shorter down time
  • Compatible footprint for drop-in replacement

Key applications:

  • Telecom - hot-swap control
  • Server - hot-swap control
  • Battery management (BMS) – battery protection
  • Power over ethernet (PoE) – port MOSFET

Overview

The OptiMOS™ 5 Linear FET 2 is the latest addition to Infineon's Linear FET family. Like the OptiMOS™ Linear FET, it features wide SOA and lowest RDS(on) in the same device. Compared to the previous generation it features improvements in SOA, leakage current, an optimized transfer characteristic to improve current sharing and the up to 13% lower RDS(on) at higher driving voltages.

Additionally, it is available in a wide package selection featuring top side cooling capability offered in the TO-Leaded top-side (TOLT).  

This makes the OptiMOS™ 5 Linear FET 2 an ideal choice in Hot-swap systems where high power density and high single MOSFET SOA are of importance. In battery protection which can be found in a wide range of applications the OptiMOS™ 5 Linear FET 2 shines with its high current carrying cabability, improved paralelling compared to OptiMOS™ 5 type of technologies and wide SOA to withstand high short circuit currents. 

The family is offered in 100 V and available packages include TO-Leadless (TOLL), TO-Leaded top-side (TOLT), D2PAK, D2PAK-7pin, SuperSO8 (5x6), PQFN 3.3x3.3, and mTOLG (8x8).

Features, benefits, applications

Key features:

  • Wide safe operating area (SOA)
  • Low RDS(on)
  • Lower IGSS compared to Linear FET
  • Optimized transfer characteristic

Key benefits:

  • Rugged linear mode operation
  • Low condition losses
  • Improved gate driver compatibility
  • Better current sharing

Key applications:

Overview

To keep-up with the growing power and reliability needs of the AI server market, the hot-swap controllers and Hot-swap MOSFETs are also evolving. Whereas the new generation of OptiMOS™ 5 Linear FET 2 sets new benchmarks in terms of power density and SOA, the digital hot-swap controllers are also evolving. One of the most notable evolutions of the controller is the ability to program the entire SOA profile of the FET, ensuring that the FET stays within its safe operating region at all times, which improves the reliability and lifetime of the overall system.

Infineon’s XDP710-002 Hot-Swap-Controller is able to drive a single or multiple parallel N-channel MOSFETs and is backward compatible to XDP710-001 with improved and enhanced features. Key features of the XDP710-002 include high-precision AFE, extensive variety of system warnings and protections, high-speed communication via PMBus to main CPU, reset, shutdown, retry and digital SOA control gate driver and charge pump for a controlled turn-ON and safe operation.

4 kW hot-swap solution example

An example of a 4 kW hot-swap solution is shown in the document linked below which has been used in power delivery boards. The solution consists of four OptiMOS™  5 Linear FET 2 IPT017N10NM5LF2 FETs and a XDP™ XDP710-002 hot-swap controller. The region of operation for this board is in the voltage range from 40 V to 60 V.

Hence, the nominal load current for 4000 W will be 4000/40 = 100 A, which is why four FETs were selected to be operated in parallel for this design, after thermal calculations. The SOA profile of the FET at 95°C is programmed into the controller.

Learn more about this application

Documents

Documents

Design resources

Developer community

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