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Overview
HybridPACK™ Drive offers a compact and scalable power solution for hybrid and electric vehicle traction, ranging from 100 kW to 300 kW, within 750 V and 1200 V classes. It allows performance scaling with thermal stacks and chipsets, maintaining the same module footprint.
Key Features
- Best-in-class Si and SiC technology
- Benchmark performance and efficiency
- Industry standard footprint
- Scalability and ease of design
- AQG324 automotive qualification
Applications
Products
About
The HybridPACK™ Drive was first introduced in 2017, using Infineon’s silicon EDT2 technology, specifically optimized to deliver the best efficiency on a real-world driving cycle. In 2021 Infineon introduced the new CoolSiC™ version, based on Infineon’s silicon carbide trench MOSFET structure. Compared to planar structures, the Trench enables a higher cell density, resulting in the best-in-class figure of merit.
In 2023, Infineon introduced the second generation of the power module: the HybridPACK™ Drive G2, featuring advanced EDT3 IGBT and CoolSiC™ G2 MOSFET chip technologies. With a power range of up to 300 kW, the HybridPACK™ Drive G2 provides higher ease-of-use and new features compared to its previous generation, such as an integration option for next-generation phase current sensor and on-chip temperature sensing for IGBT products, which enable system cost improvements. It also delivers higher performance and power density thanks to improved assembly and interconnect technology. By 2025, the HybridPACK™ Drive G2 portfolio will expand to include different current ratings and voltage levels (750 V and 1200 V).
- Most scalable power portfolio in the market with IGBT and CoolSiC™ options in 1200 V and 750 V for various power classes, without need for major system redesign
- HybridPACK™ Drive G1: EDT2 and CoolSiC™ chipset with high power density and soft switching behavior for ease of design for traction inverters in EVs
- HybridPACK™ Drive G2 continuing the success: EDT3 and CoolSiC™ G2 technology with new benchmark performance and efficiency for improved cost/performance ratio
- Full automotive qualification AQG324
The HybridPACK™ Drive was first introduced in 2017, using Infineon’s silicon EDT2 technology, specifically optimized to deliver the best efficiency on a real-world driving cycle. In 2021 Infineon introduced the new CoolSiC™ version, based on Infineon’s silicon carbide trench MOSFET structure. Compared to planar structures, the Trench enables a higher cell density, resulting in the best-in-class figure of merit.
In 2023, Infineon introduced the second generation of the power module: the HybridPACK™ Drive G2, featuring advanced EDT3 IGBT and CoolSiC™ G2 MOSFET chip technologies. With a power range of up to 300 kW, the HybridPACK™ Drive G2 provides higher ease-of-use and new features compared to its previous generation, such as an integration option for next-generation phase current sensor and on-chip temperature sensing for IGBT products, which enable system cost improvements. It also delivers higher performance and power density thanks to improved assembly and interconnect technology. By 2025, the HybridPACK™ Drive G2 portfolio will expand to include different current ratings and voltage levels (750 V and 1200 V).
- Most scalable power portfolio in the market with IGBT and CoolSiC™ options in 1200 V and 750 V for various power classes, without need for major system redesign
- HybridPACK™ Drive G1: EDT2 and CoolSiC™ chipset with high power density and soft switching behavior for ease of design for traction inverters in EVs
- HybridPACK™ Drive G2 continuing the success: EDT3 and CoolSiC™ G2 technology with new benchmark performance and efficiency for improved cost/performance ratio
- Full automotive qualification AQG324