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IGBT Discretes

Market Leadership Through Groundbreaking Innovation and Application Focus

Striving for the highest standards in performance and quality, Infineon offers a comprehensive application
specific discrete IGBT portfolio that is second to none. New products are application specific developed to achieve highest value.



eLearning_TRENCHSTOP_Performance Shortform Catalog

Reliability-data-button

 

IGBT Discretes Selection Tree

Click to enlarge

IGBT-Discretes-Selection-Tree

 

 

Latest Innovations

600V_TRENCHSTOP_TO-247_vA_plain  

NEW TRENCHSTOP™ Performance IGBT

Infineon's new TRENCHSTOP™ Performance IGBT (60TP)  is the higher efficiency and competitive price IGBT for applications working up to 20kHz in hard-switching topologies.

Learn more

 

New! 650V TRENCHSTOP™ S5 family


IGBT Discretes


Nomenclature Guide - Discrete IGBTs and Diodes

Download now

 

600V_TRENCHSTOP_TO-247_vA_plain  

NEW TRENCHSTOP™ Performance IGBT

Infineon's new TRENCHSTOP™ Performance IGBT (60TP)  is the higher efficiency and competitive price IGBT for applications working up to 20kHz in hard-switching topologies.

Learn more

 

Product_image_TrenchstopS5  

650V TRENCHSTOP™ 5 - discover the discrete IGBT families H5/F5/L5/WR5 and the new S5

650V TRENCHSTOP™ 5 is the highest efficiency discrete IGBT technology on the market and ideally suited for customers who are looking for outstanding efficiency and power density. It consists of 5 subcategories - H5, F5, L5, WR5 and the new S5 - positioned clearly according to switching frequencies, targeted for applications such as Welding, UPS, Photovoltaic and Energy Storage.

Read more about Infineon's 650V TRENCHSTOP™ 5 families

 

 

Discrete IGBT in TO-247PLUS package - maximum flexibility in high power 600V designs

  • Highest current rating co-pack 600V in 100A and 120A
  • Extended creepage distance of 4.25mm
  • 20% lower thermal resistance vs TO-247

Read more about our Discrete IGBT in TO-247PLUS package

 

 

 

 

TRENCHSTOP™ 5 in TO-247 4pin package - redefining new levels of switching losses and power density

  • 20% reduction in total switching losses vs TO-247
  • True benefit seem under high current conditions
  • Extremely low emitter inductance loop

Discover more about our TRENCHSTOP™ 5 in TO-247 4pin package

 

 

TO247_650V-RC-H5  

 

 

650V/1200V/1350V Next Generation Reverse Conducting IGBT- higher efficiency and better reliability

The latest generation of reverse conducting IGBTs has been optimized for the demanding requirements of Induction Cooking applications. The new 20A RC-H5 1200V and 1350V devices complement the previous generation of reverse conduction IGBTs and extend the performance leadership of the RC-H family, focusing on system efficiency and reliability.

Discover more about latest generatio of RC IGBT

 


Reliability-data-button IGBT Modules Intelligent Power Modules

 


IGBT Discretes

Product Selection Guide

Title Size Date Version
989 KB 12 Apr 2016 00_00
343 KB 06 Apr 2016 00_01
21 MB 22 Feb 2016 00_00

Product Catalogue

Title Size Date Version
4.8 MB 21 Jun 2016 02_00

Product Brochure

Title Size Date Version
1.3 MB 27 Apr 2016 08_00

Product Brief

Title Size Date Version
322 KB 25 Apr 2016 01_00
446 KB 27 Jan 2015 01_00
278 KB 14 Jul 2014 01_00
74 KB 13 May 2014 01_00
302 KB 28 Apr 2014
179 KB 07 Feb 2014
454 KB 04 Jun 2013
501 KB 18 Oct 2012
246 KB 07 Aug 2012 01_00

Product Family Overview

Title Size Date Version
1.3 MB 18 Feb 2014
856 KB 09 Nov 2012
501 KB 10 May 2010

Application Brochure

Title Size Date Version
2 MB 01 Mar 2014 01_00
4.4 MB 24 May 2016 01_00
2.4 MB 27 Apr 2016 09_00
409 KB 28 Jan 2016 01_00
340 KB 23 Oct 2015 01_00
6.7 MB 30 Jul 2014
1.9 MB 26 Jun 2014 01_00

Application Notes

Title Size Date Version
738 KB 17 Dec 2015 01_00
1.2 MB 13 Nov 2015 01_00
728 KB 05 Aug 2014
691 KB 19 Oct 2015 01_00
1.6 MB 01 Oct 2015 01_00
1.1 MB 04 Nov 2014 01_00
983 KB 29 Nov 2013
794 KB 30 Sep 2013
2.3 MB 12 Nov 2012
206 KB 13 Aug 2013
426 KB 22 Jan 2013
3.8 MB 17 Oct 2012
887 KB 07 Aug 2012
625 KB 19 Jun 2010
167 KB 19 Jun 2010
97 KB 19 Jun 2010
194 KB 09 Apr 2009
307 KB 09 Apr 2009
428 KB 09 Apr 2009
724 KB 09 Apr 2009
1.1 MB 09 Apr 2009
84 KB 09 Apr 2009
1.4 MB 19 Jun 2004

Article

Title Size Date Version
359 KB 10 Dec 2014 01_00
708 KB 10 Dec 2014 01_00
536 KB 10 Dec 2014 01_00
432 KB 01 Oct 2014
1.6 MB 13 Aug 2014
231 KB 14 May 2014
375 KB 16 Nov 2012

Additional Product Information

Title Size Date Version
478 KB 27 Apr 2016 01_00
134 KB 28 Jan 2016 01_00
82 KB 28 Jan 2015 01_00
229 KB 20 Aug 2015 01_00
133 KB 14 May 2014
96 KB 18 Feb 2014
177 KB 12 Nov 2012
587 KB 09 Nov 2012
175 KB 23 Oct 2012
88 KB 05 May 2010

IGBT Discretes

Evaluation Boards

Board Family Description Status
EVAL-IGBT-650V-TO247-4 IGBT Discrete Adaptable double pulse tester for IGBTs in TO-247 4pin package
    active and preferred
    IRMDG62-1-D2
    • IRGS4610DPBF
    active
    EVAL-1ED020I12-BT Gate Driver, IGBT Discrete Evaluation Board for 1ED020I12-BT - Galvanic isolated single channel IGBT driver IC with CT technology for 600V/1200V IGBTs.
    • Driving IGBTs
    • For equipping 1ED 1200V single channel EiceDRIVER™
    active and preferred
    EVAL-2EDL23I06PJ Gate Driver, IGBT Discrete Evaluation Board for 2EDL23I06PJ - Optimized 600V half bridge gate driver IC with LS-SOI technology to control THT Highspeed3-IGBT IKP20N60H3 in TO220 package.
    • Driving IKP20N60H3
    • For equipping 2EDL23I06PJ EiceDRIVER™
    active and preferred
    EVAL-2ED020I12-F2 Gate Driver, IGBT Discrete Evaluation Board for 2ED020I12-F2 - Galvanic isolated dual channel IGBT driver IC with CT technology for 600V/1200V IGBTs.
    • Driving IGBTs
    • For equipping 2ED020I12-F2 EiceDRIVER™
    active and preferred
    EVAL-6EDL04I06PT Gate Driver, IGBT Discrete Evaluation Board for 6EDL04I06PT - Full bridge 3 Phase gate driver IC with LS-SOI technology to control power devices like MOS-transistors or 600V IGBTs
    • Driving RCD-IGBTs
    • For equipping 6EDL04N02PR EiceDRIVER™
    active and preferred
    EVAL-2EDL05I06PF Gate Driver, IGBT Discrete, MOSFET Evaluation Board for 2EDL05I06PF - Optimized 600V half bridge gate driver IC with LS-SOI technology to control power devices like MOS-transistors or IGBTs.
    • Driving IGBT Modules
    • For equipping 1ED 1200V single channel EiceDRIVER™
    active and preferred
    EVAL-1EDI60I12AF Gate Driver, IGBT Discrete, MOSFET Evaluation Board for 1EDI60I12AF – two 1200V single channel coreless transformer isolated gate driver IC in half bridge configuration for MOS-transistors or IGBTs.
    • Driving MOS-transistors or IGBTs
    • For equipping 1EDI 1200V single channel EiceDRIVER™
    active and preferred

    PCB Design Data

    Title Size Date Version
    776 KB 21 Nov 2013 02_00
    926 KB 20 Nov 2013 02_00
    603 KB 20 Nov 2013 02_00
    117 KB 20 Nov 2013 02_00

    IGBT Discretes

    Simulation Models

    Title Size Date Version
    6 KB 14 Jul 2016 01_01
    9 KB 09 Oct 2015 01_00
    6 KB 12 Aug 2014 05_00
    7 KB 17 Jun 2014
    8 KB 16 Jul 2013 01_00
    9 KB 11 Jul 2013
    5 KB 11 Jul 2013 03_05
    4 KB 11 Jul 2013 02_06
    8 KB 11 Jul 2013 03_01
    7 KB 11 Jul 2013 03_00
    4 KB 11 Jul 2013 03_00
    4 KB 11 Jul 2013 01_00
    7 KB 11 Jul 2013 00_05
    7 KB 11 Jul 2013 03_00
    9 KB 11 Jul 2013 03_00
    10 KB 11 Jul 2013 01_00
    8 KB 11 Jul 2013 01_00
    5 KB 11 Jul 2013 02_06
    6 KB 11 Jul 2013 01_00
    6 KB 11 Jul 2013 01_00
    6 KB 11 Jul 2013 03_00
    9 KB 03 Jan 2013
    14 KB 03 Jan 2013
    3 KB 26 Jul 2007 01_00

    Simulation Tool

    Title Size Date Version
    809 B 06 Jun 2016 01_00

    IGBT Discretes

    trenchstop-performance-elearning

    eLearning 600V TRENCHSTOP™ Performance IGBT

    Infineon's new TRENCHSTOP™ Performance (60TP) IGBT is the new higher efficiency and competitive price IGBT for applications working up to 30kHz in hard-switching topologies

     
    Length 2:42

     

    Low VCE(sat) Optimized TRENCHSTOP™ 5 L5

    TRENCHSTOP™ 5 Soft Hard Switching “S5” Introduction

    Brief introduction into the key values and customer benefits of the new TRENCHSTOP™ S5 Family

     
    Length 2:42

     

    Low VCE(sat) Optimized TRENCHSTOP™ 5 L5

    Low VCE(sat) Optimized TRENCHSTOP™ 5 L5

    The TRENCHSTOP™ 5 family L5 with low saturation voltage VCE(sat) is optimized for polarity switches at switching frequencies of 50kHz-20kHz. The intrinsically low conduction losses of the 55µm TRENCHSTOP™ 5 thin wafer technology have been reduced further with additional optimization of the carrier profile.

     
    Length 2:42

     

    RC-H5 The Next Generation Reverse Conduction IGBT Part 1 of 2

    RC-H5 The Next Generation Reverse Conduction IGBT Part 1 of 2

    The latest generation of reverse conducting IGBTs has been optimized for the demanding requirements of Induction Cooking applications. RC-H5 offers up to 30% reduction in switching losses, allowing designers to use higher frequencies.

     
    Length 5:30

     

    TRENCHSTOP™ 5 IGBTs in Kelvine Emitter Configuration - Benefits of TRENCHSTOP™ 5 in TO-247 4pin

    TRENCHSTOP™ 5 IGBTs in Kelvine Emitter Configuration - Benefits of TRENCHSTOP™ 5 in TO-247 4pin

    This video will provide you information about the best in class performance of the TRENCHSTOP™5 IGBT technology. Infineon offers the technology in a high power package with an extra Kelvin Emitter pin. 

     
    Length 2:06

     

    Discrete IGBT in TO-247PLUS Features and Benefits

    Discrete IGBT in TO-247PLUS Features and Benefits

    TO-247PLUS package has the same dimensions as standard TO-247, but accomodates as much as 100A and 120A duopack IGBT can. Due to bigger thermal pad area the TO-247PLUS package has lower package thermal resistance, better heat dissipation capabilities.

     
    Length 2:34

     

    IGBT Discretes

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