650V/1200V/1350V Next Generation Reverse Conducting IGBT

 
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650V/1200V/1350V Next Generation Reverse Conducting IGBT

Higher Efficiency and Better Reliability

 
Header_RC-H5_Gen5_WEB

 

The latest generation of reverse conducting IGBTs has been optimized for the demanding requirements of Induction Cooking applications. The new 20A RC-H5 1200V and 1350V devices complement the previous generation of reverse conduction IGBTs and extend the performance leadership of the RC-H family, focusing on system efficiency and reliability.

 

The new RC-H5 650V devices have been optimized for the lowest V CE(sat) for best efficiency and thermal performance, as well as lower E off for the improved performance in designs with higher switching frequencies. Up to 30% reduction in losses is now possible.

 

The next generation offers up to 30% reduction in switching losses, allowing designers to use higher frequencies. With this increased switching frequency comes the flexibility of higher efficiency or system cost reductions from smaller coil choices.

 

Product Portfolio 5th Generation Reverse Conducting IGBT - 1200V and 1350V

Click on a product type to learn more, download datasheet and order 

    IHW20N120R5 IHW20N135R5
Package   TO-247 TO-247
V br (V)   1200 1350
I c (A) T case (25°C) 40 40
I c (A) T case (100°C) 20 20
V CE(sat) (V) T j (25°C) 1.55 1.65
V CE(sat) (V) T j (175°C) 1.85 1.95
V f typ (V) T j (175°C) 1.85 1.95
E off (mJ) @ 600V, 100V/µs T j (25°C) 0.075 0.10

*Preliminary

 

Product Portfolio 5th Generation Reverse Conducting IGBT - 650V

Click on a product type to learn more, download datasheet and order

Part Number V CE [V] I C [A] V CE(sat), T vj=25°C [V] T vjmax [C°] Package
IHW20N65R5 650 20 1.35 175 PG-TO247-3
IHW30N65R5 650 30 1.35 175 PG-TO247-3
IHW40N65R5 650 40 1.35 175 PG-TO247-3
IHW50N65R5 650 50 1.35 175 PG-TO247-3



650V/1200V/1350V Next Generation Reverse Conducting IGBT


Features Benefits Applications
  • Switching losses reduced by 30%
  • Very low conduction losses
  • T j(max) = 175°C
  • Soft current turn-off waveforms for low EMI
  • Higher blocking voltage V BR(min) = 1350V
  • Increased switching frequency
  • Lowest power dissipation
  • Better thermal management for higher reliability
  • Lower EMI filtering requirements
  • Reduced system costs

 

Button IGBT Discretes Selection Guide 175x75 IFX_Website-Button_Webinars Reliability-data-button Banner_Simulation_Models_IGBT

 


650V/1200V/1350V Next Generation Reverse Conducting IGBT

Application Notes

Title Size Date Version
983 KB 29 Nov 2013

Product Brief

Title Size Date Version
74 KB 13 May 2014 01_00

Product Family Overview

Title Size Date Version
1.3 MB 18 Feb 2014

Article

Title Size Date Version
231 KB 14 May 2014

Additional Product Information

Title Size Date Version
96 KB 18 Feb 2014
133 KB 14 May 2014

Application Brochure

Title Size Date Version
2 MB 01 Mar 2014 01_00

Product Selection Guide

Title Size Date Version
325 KB 14 Apr 2015 01_00
11.6 MB 01 Feb 2015 01_00

650V/1200V/1350V Next Generation Reverse Conducting IGBT

Simulation Models

Title Size Date Version
6 KB 12 Aug 2014 05_00

650V/1200V/1350V Next Generation Reverse Conducting IGBT

Videos Next Generation Reverse Conducting IGBT

RC-H5 The Next Generation Reverse Conduction IGBT Part 1 of 2 RC-H5 The Next Generation Reverse Conduction IGBT Part 2 of 2

650V/1200V/1350V Next Generation Reverse Conducting IGBT

650V/1200V/1350V Next Generation Reverse Conducting IGBT

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