Overview

Including silicon-on-insulator (SOI) and junction isolation (JI) offerings. We offer three-phase, half-bridge, high- and low-side, single high-side gate driver ICs and current sense support ICs tailored for 500 V to 700 V major home appliances, industrial drives, residential air-conditioning, or general-purpose motor control and inverters.

Key features
  • Low quiescent current
  • Integrated bootstrap diodes
  • To +700 VOFFSETvoltage
  • Standard pin-out and packages
Applications
Motor Control
Home appliances
Smart induction cooktop – precise and efficient he

Products

About

500 V - 650 V level-shift gate driver overview

We offer a comprehensive portfolio of level-shift gate driver ICs for 500 V to 650 V applications requiring functional isolation. 

These drivers are available in various three-phase, half-bridge, or high- and low-side configurations with protection features such as fast & accurate over-current protection (OCP), under-voltage lock out (UVLO), cross-conduction prevention logic, status indicators like fault, enable, and shutdown. All devices are available in standard industry packages and pinouts.

500 V - 650 V gate drivers are available with our level-shift junction isolation technology or our unique silicon-on-insulator (SOI) technology.

EiceDRIVER ™ gate driver IC applications

500 V - 650 V gate driver ICs switch IGBTs, enhancment mode N-Channel MOSFETS in various power electronic applications such as:

  • Motor drives, general purpose inverters having TRENCHSTOP ™ IGBT6 or 600 V EasyPACK™ modules
  • Refrigeration compressors, induction cookers, other major home appliances having RCD series IGBTs or TRENCHSTOP™ family IGBTs or their equivalent power stages
  • Battery operated small home appliances such as power tools, vacuum cleaners using low voltage OptiMOS™ MOSFETs or their equivalent power stages
  • Totem pole, half-bridge and full-bridge converters in offline AC-DC power supplies for industrial SMPS having high voltage CoolMOS™ super junction MOSFETs or TRENCHSTOP™ H3 and WR5 IGBT series 
  • High power LED and HID lighting having CoolMOS™ super junction MOSFETs
  • Electric vehicle (EV) charging stations and battery management systems
  • Driving 650 V SiC MOSFETs in above application
  • Our SOI based solutions also support high frequency for applications with above 100 kHz switching frequency due to the 50% lower level shift losses when compared to typical junction isolated devices
EiceDRIVER ™ level-shift silicon on insulator (SOI) technology

Our silicon-on-insulator (SOI) technology is a high-voltage, level-shift technology providing unique and best-in-class advantages, including integrated bootstrap-diode (BSD) and industry best-in-class robustness to protect against negative transient voltage spikes. Each transistor is isolated by buried silicon dioxide, which eliminates the parasitic bipolar transistors that causing latch-up. This technology can also lower the level-shift power losses to minimize device-switching power dissipation. The advanced process allows monolithic high-voltage and low-voltage circuitry construction with technology-enhanced benefits.

Learn more
EiceDRIVER ™ level-shift junction isolation (JI) technology

The p-n junction-isolation (JI) technology is a mature, proven industry-standard MOS/CMOS fabrication technique. Our proprietary high-voltage integrated circuit (HVIC) and latch-immune CMOS technologies enable rugged monolithic construction. The advanced process allows monolithic high-voltage and low-voltage circuitry construction with the best price per performance. 

Learn more

500 V - 650 V level-shift gate driver overview

We offer a comprehensive portfolio of level-shift gate driver ICs for 500 V to 650 V applications requiring functional isolation. 

These drivers are available in various three-phase, half-bridge, or high- and low-side configurations with protection features such as fast & accurate over-current protection (OCP), under-voltage lock out (UVLO), cross-conduction prevention logic, status indicators like fault, enable, and shutdown. All devices are available in standard industry packages and pinouts.

500 V - 650 V gate drivers are available with our level-shift junction isolation technology or our unique silicon-on-insulator (SOI) technology.

EiceDRIVER ™ gate driver IC applications

500 V - 650 V gate driver ICs switch IGBTs, enhancment mode N-Channel MOSFETS in various power electronic applications such as:

  • Motor drives, general purpose inverters having TRENCHSTOP ™ IGBT6 or 600 V EasyPACK™ modules
  • Refrigeration compressors, induction cookers, other major home appliances having RCD series IGBTs or TRENCHSTOP™ family IGBTs or their equivalent power stages
  • Battery operated small home appliances such as power tools, vacuum cleaners using low voltage OptiMOS™ MOSFETs or their equivalent power stages
  • Totem pole, half-bridge and full-bridge converters in offline AC-DC power supplies for industrial SMPS having high voltage CoolMOS™ super junction MOSFETs or TRENCHSTOP™ H3 and WR5 IGBT series 
  • High power LED and HID lighting having CoolMOS™ super junction MOSFETs
  • Electric vehicle (EV) charging stations and battery management systems
  • Driving 650 V SiC MOSFETs in above application
  • Our SOI based solutions also support high frequency for applications with above 100 kHz switching frequency due to the 50% lower level shift losses when compared to typical junction isolated devices

EiceDRIVER ™ level-shift silicon on insulator (SOI) technology

Our silicon-on-insulator (SOI) technology is a high-voltage, level-shift technology providing unique and best-in-class advantages, including integrated bootstrap-diode (BSD) and industry best-in-class robustness to protect against negative transient voltage spikes. Each transistor is isolated by buried silicon dioxide, which eliminates the parasitic bipolar transistors that causing latch-up. This technology can also lower the level-shift power losses to minimize device-switching power dissipation. The advanced process allows monolithic high-voltage and low-voltage circuitry construction with technology-enhanced benefits.

Learn more

EiceDRIVER ™ level-shift junction isolation (JI) technology

The p-n junction-isolation (JI) technology is a mature, proven industry-standard MOS/CMOS fabrication technique. Our proprietary high-voltage integrated circuit (HVIC) and latch-immune CMOS technologies enable rugged monolithic construction. The advanced process allows monolithic high-voltage and low-voltage circuitry construction with the best price per performance. 

Learn more

Documents

Documents

News & highlights

EiceDRIVER™ 2EDL Driver IC Family

EiceDRIVER™ 2EDL 600 V half bridge gate driver IC family basing on level-shifter SOI (Silicon on Insulator) technology integrates low-ohmic ultrafast bootstrap diode and supports higher efficiency and smaller form factors.

Advantages of Infineon SOI Gate Driver Technology

1200 V Silicon-On-Insulators level-shift gate drivers from the market leader. This video demonstrates the advantages of products with Infineon SOI. E.g. Integrated bootstrap diode, Low level-shift losses - saving space and cost.

An Introduction to Infineon Gate Drivers

What is a gate driver? Why use a gate driver? How to use a gate driver? Watch our introduction video and become a gate driver expert.