2EDL6014AC-G2D
NEW
Active and preferred
RoHS Compliant
Lead-free

2EDL6014AC-G2D

NEW
EiceDRIVER™ 120 V Level shifter gate driver IC that is designed to drive dual high-side, dual low-side or half-bridge configurations of Si MOSFETs
Datasheet
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2EDL6014AC-G2D
2EDL6014AC-G2D
Datasheet

Product details

  • Channels
    2
  • Input Vcc range
    2.97 V to 5.5 V
  • Input Voltage range
    2.97 V to 5.5 V
  • Iout max
    6 A
  • Number of Outputs
    2
  • Output Voltage range
    0 V to 16 V
  • Package
    WQFN11-2.2x2.2
  • Qualification
    Industrial
  • Topology
    Dual-floating channels
Recommended
OPN
2EDL6014ACG2DXTMA1
Product Status active and preferred
Infineon Package
PG-WQFN-11-1
Package Name N/A
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
PG-WQFN-11-1
Package Name N/A
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
The EiceDRIVER™ 2EDL6014AC is a dual-channel level shifter gate driver IC with dual floating outputs to drive silicon MOSFETS. This strong 4 A/6 A source/sink current dual-channel gate driver has a programmable driving current on OUTA to limit inrush current during system start-up. It is available in QFN-11 (2.2 x 2.2 mm) with an exposed thermal pad for good thermal management.

Features

  • Dual-channel floating output gate driver
  • Strong 4 A source and 6 A sink current
  • Configurable driving current on OUTA
  • Package: QFN-11 2.2x2.2 mm w/ exposed pad
  • Low RthJC_B
  • 4 V to 16 V driving capability

Benefits

  • Support wide range of power topologies
  • Compact and thermally capable solution
  • Suitable for high power applications
  • Flexible for many customer requirements
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