600 V CoolMOS™ P6

Superior efficiency combined with ease of use

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Overview

600 V CoolMOS™ P6 SJ MOSFET is a general-purpose part suitable for most high-power applications and suitable for both soft- and hard-switching applications due to its good body diode ruggedness. Optimizations such as Qg, Vth, Eon, and Eoff enable its superior efficiency, while its ease-of-use is attributed to the optimized dV/dt (di/dt) controllability, internal Rg, and improved oscillation behavior.

Key Features

  • Reduced gate charge (Qg)
  • Optimized Vthfor soft switching
  • Good body diode ruggedness
  • Optimized integrated Rg
  • Improved dV/dt

Products

About

CoolMOS™ P6 SJ MOSFET family achieves very low conduction and switching losses, especially in light load conditions, enabling switching applications to work more efficiently and be designed to be more compact, lighter, and cooler. 

With its granular portfolio, CoolMOS™ P6 addresses the specific needs of applications such as servers, PC power, telecom rectifiers, and consumer applications while offering the best price/performance ratio on the market today. CoolMOS™ P6 SJ MOSFET family is optimized for ease-of-use and addresses typical design challenges in high-power SMPS while offering best-in-class efficiency on a level close to the CoolMOS™ CP SJ MOSFET family.

The 600 V CoolMOS™ P6 superjunction (SJ) MOSFETs are offered in both SMD packages (DPAK & D2PAK, Thin-PAK 5x6, Thin-PAK 8x8) and through-hole (TO-220, isolated TO-220 FullPAK, TO-247, and Kelvin-source TO-247-4).

The device range covers 41 mΩ/77.5 A to 600 mΩ/4.9 A ratings.

  • Improved efficiency in light load condition
  • Better efficiency in soft-switching applications due to earlier turn-off
  • Suitable for hard- and soft-switching topologies
  • Excellent ease-of-use and good controllability of switching behavior
  • High robustness
  • Outstanding quality and reliability

This plug-and-play measurement comparison in a PFC converter shows the benefit of CoolMOS™ P6 in comparison to CoolMOS™ C6 and CoolMOS™ CP. At 10 percent light load condition, P6 has an efficiency improvement of over 0.45 percent, and at full load, 1.25 percent compared to C6. This efficiency benefit results due to QG reduction and a relatively high Vth

In a comparative LLC measurement, P6 shows an efficiency benefit against E6 over 0.8 percent at light load. This improvement is also based on a Qreduction of 30 percent compared with E6. At full load, P6 and E6 give similar efficiency measured results due to the same RDS(on) level, which is the important parameter at full load.

CoolMOS™ P6 SJ MOSFET family achieves very low conduction and switching losses, especially in light load conditions, enabling switching applications to work more efficiently and be designed to be more compact, lighter, and cooler. 

With its granular portfolio, CoolMOS™ P6 addresses the specific needs of applications such as servers, PC power, telecom rectifiers, and consumer applications while offering the best price/performance ratio on the market today. CoolMOS™ P6 SJ MOSFET family is optimized for ease-of-use and addresses typical design challenges in high-power SMPS while offering best-in-class efficiency on a level close to the CoolMOS™ CP SJ MOSFET family.

The 600 V CoolMOS™ P6 superjunction (SJ) MOSFETs are offered in both SMD packages (DPAK & D2PAK, Thin-PAK 5x6, Thin-PAK 8x8) and through-hole (TO-220, isolated TO-220 FullPAK, TO-247, and Kelvin-source TO-247-4).

The device range covers 41 mΩ/77.5 A to 600 mΩ/4.9 A ratings.

  • Improved efficiency in light load condition
  • Better efficiency in soft-switching applications due to earlier turn-off
  • Suitable for hard- and soft-switching topologies
  • Excellent ease-of-use and good controllability of switching behavior
  • High robustness
  • Outstanding quality and reliability

This plug-and-play measurement comparison in a PFC converter shows the benefit of CoolMOS™ P6 in comparison to CoolMOS™ C6 and CoolMOS™ CP. At 10 percent light load condition, P6 has an efficiency improvement of over 0.45 percent, and at full load, 1.25 percent compared to C6. This efficiency benefit results due to QG reduction and a relatively high Vth

In a comparative LLC measurement, P6 shows an efficiency benefit against E6 over 0.8 percent at light load. This improvement is also based on a Qreduction of 30 percent compared with E6. At full load, P6 and E6 give similar efficiency measured results due to the same RDS(on) level, which is the important parameter at full load.

Documents

Design resources

Developer community

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