Active and preferred
RoHS Compliant

IAUCN08S7N013

80 V, N-Ch, 1.3 mΩ max, Automotive MOSFET, SSO8 (5x6), OptiMOS™ 7
Data Sheet
package
ea.
in stock

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IAUCN08S7N013
IAUCN08S7N013
ea.
Data Sheet

Product details

  • ID (@25°C) max
    175 A
  • Launch year
    2023
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    PG-TDSON-8
  • Planned to be available until at least
    2038
  • Polarity
    N
  • QG (typ @10V) max
    116 nC
  • QG (typ @10V)
    89 nC
  • Qualification
    Automotive
  • RDS (on) (@10V) max
    1.3 mΩ
  • Technology
    OptiMOS™-7
  • VDS max
    80 V
  • VGS(th)
    2.8 V
Recommended
OPN
IAUCN08S7N013ATMA1
Product Status active and preferred
Infineon Package
PG-TDSON-8
Package Name Single SSO8
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TDSON-8
Package Name Single SSO8
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
Infineon introduces its first MOSFET in our next, leading edge, power technology; OptiMOS™ 7 80V. This debut product is offered in our versatile, robust, high current SSO8 5x6mm2 SMD package. It is designed specifically for high performance, high quality and the robustness needed for demanding automotive applications. IAUCN08S7N013 is a true step forward in the area of power density.

Features

  • RDS(on) reduced > 50% from prior best
  • Industry’s best RDS(on)
  • Leading edge FOM (RDS(on)x Qg)
  • Fast switching times (turn on/off)
  • Low package resistance and inductance
  • High avalanche current capability
  • High SOA ruggedness
  • Extended qualification beyond AEC-Q101
  • Enhanced electrical testing
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • PPAP Capable Device

Benefits

  • Minimized conduction losses
  • Superior switching performance
  • Highest power density in 5x6mm package
  • High power efficiency
  • Small footprint & efficient cooling
  • Increased design ruggedness
  • Designed for Automotive robustness
  • High quality production for Automotive
  • Excellent thermal performance

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }