Gate Driver ICs

Experience the difference with EiceDRIVER™ Gate Driver ICs for MOSFETs, IGBTs, SiC MOSFETs, and GaN HEMTs

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EiceDRIVER™ Gate Driver IC Portfolio Overview

Gate Driver ICs enable efficient switching and protection of IGBTs, Si MOSFETs, SiC MOSFETs, and GaN HEMTs in applications including industrial drives, renewable energy systems, EV charging, automotive electronics, AI data centers, power supplies, and home appliances.

Infineon's EiceDRIVER™ Gate Driver IC portfolio supports output currents from 0.1 A to 18 A and operating voltages up to 2500 V. Designed for automotive, industrial, and consumer applications, these solutions integrate protection features to reduce design complexity and improve reliability.

Key advantages:

  • Decades of Gate Driver expertise and market-proven solutions across Coreless Transformer, Silicon-on-Insulator, Junction Isolated, and Non-Isolated technologies.
  • Optimized for CoolSiC™ MOSFETs and CoolGaN™ HEMTs to maximize switching performance and system reliability.
  • Automotive-ready solutions with AEC-Q100 qualified options and support for ASIL-oriented functional safety designs.
  • Comprehensive design ecosystem - evaluation boards, reference designs, application notes, simulation models, and other design resources help accelerate development.

Explore the EiceDRIVER™ portfolio by:

  • Topology: High-side, low-side, half-bridge, three-phase, and other driver solutions including isolated gate drivers, transformer drivers, and motor drivers.
  • Power Device: IGBTs, Si MOSFETs, SiC MOSFETs, and GaN HEMTs.
  • Technology: Coreless transformer, Silicon-on-Insulator, Junction Isolated and Non-isolated.
  • Application: Automotive, industrial, and consumer systems.

High-Side, Low-Side, Half-Bridge, Three-Phase & Other Gate Driver ICs

  • High-Side Gate Driver ICs: High-side Gate Drivers are typically single-channel solutions used to drive a floating, switch-node referenced power switch. Available in level-shift and isolated architectures, they are commonly used in power supplies, EV charging, renewable energy, and industrial power conversion systems.
  • Low-Side Gate Driver ICs: Low-side Gate Drivers are typically one- or two-channel solutions used to drive ground-referenced power switches. They provide robust, high-current gate-drive capability for power supplies, motor control, and industrial applications, including transformer driver interface solutions.
  • Half-Bridge Gate Driver ICs: Dual-channel gate drivers integrate both high-side and low-side drivers in a single device, simplifying the control of half-bridge power stages. These half-bridge gate drivers include an interlock function to prevent the simultaneous activation of both outputs. Built on Infineon's Silicon-on-Insulator and Junction Isolated technologies, they are widely used in motor drives, home appliances, EV charging, renewable energy, and power supply applications.
  • Three-Phase Gate Driver ICs: Three-phase Gate Drivers integrate six driver channels to control a complete three-phase inverter stage. They simplify motor-control designs in robotics, industrial automation, home appliances, HVAC systems, and battery-powered applications.
  • Other Gate Driver ICs: Specialized Gate Driver solutions address applications requiring galvanic isolation, isolated bias-power generation, or automotive motor-control functionality.
    Isolated Gate Driver ICs       Transformer Driver ICs        MOTIX™ Motor Gate Driver ICs

Gate Driver Solutions for SiC MOSFET & GaN Switches

  • Gate Driver ICs for SiC MOSFETs
    CoolSiC™ MOSFETs benefit from EiceDRIVER™ isolated Gate Drivers with high CMTI, active Miller clamp functionality, wide output-side supply range, and galvanic isolation. These features help maximize efficiency while ensuring robust operation in high-voltage applications.

  • Gate Driver ICs for GaN HEMTs
    CoolGaN™ devices and EiceDRIVER™ Gate Driver ICs are designed to work together to achieve high efficiency and power density. Optimized solutions support both GaN GIT and Schottky-gate HEMTs while minimizing design effort and accelerating development.

Coreless Transformer, SOI, JI & Non-Isolated Technologies

  • Coreless Transformer (CT) Technology -  Infineon's CT technology enables galvanic isolation with excellent common-mode transient immunity, fast signal transmission, and robust operation in high-voltage environments. This technology is well suited for driving SiC MOSFET and GaN HEMT switches where noise immunity and switching performance are critical.
    Related product families: Isolated Gate Driver ICs,  Transformer Driver ICs
  • Silicon-on-Insulator (SOI) Technology - Infineon's SOI technology provides high noise immunity, high-voltage robustness, and reliable operation in industrial applications. SOI technology enables high-side and half-bridge gate driver architectures and supports integrated level-shift functionality for efficient high-voltage switching control.
  • Juntion Isolated (JI) Technology - Infineon's JI technology delivers reliable high-voltage performance and cost-effective integration across a broad portfolio of gate driver solutions. JI technology supports robust level-shift implementations while providing excellent long-term reliability for industrial and consumer applications.
  • Non-Isolated Technology - Non-isolated technology provides a compact, cost-effective solution for many power-conversion applications where galvanic isolation is not required. These solutions deliver fast switching performance, low propagation delays, and simplified system implementation while supporting a wide range of topologies.
    Related product families: Low-Side Gate Driver ICs

 

Find Gate Driver ICs for Automotive, Industrial & Consumer Applications

EiceDRIVER™ Gate Driver ICs support a wide range of power conversion and motor control applications across automotive, industrial, and consumer markets.
 

Related Automotive Solutions: Automotive Gate Driver ICs

EiceDRIVER™ Gate Driver Features: Protection, Control & Reliability

Infineon's EiceDRIVER™ Gate Driver ICs deliver integrated protection, control, and monitoring for reliable and high-performance power switching through a wide range of features.

  • DESAT (desaturation) Protection: Monitors the voltage across the power device to detect short-circuit and overload conditions.
    Benefit: Enables rapid fault detection and shutdown to help prevent catastrophic device failure.

  • Active Miller Clamp: Integrated clamp that prevents unwanted gate voltage rise caused by Miller current during high dV/dt switching events.
    Benefit: Reduces the risk of parasitic turn-on and improves switching robustness.

  • Shoot-Through Protection: Integrated logic that prevents simultaneous conduction of high-side and low-side switches.
    Benefit: Helps protect inverter stages and improve system reliability.

  • Soft Shutdown: A controlled shutdown mechanism activated during fault conditions.
    Benefit: Reduces voltage overshoot and stress on the power semiconductor device during abnormal operating events

  • Two-Level Turn-Off & Slew-Rate Control: Advanced switching-control techniques that manage turn-off behavior and switching speed during normal and fault conditions.
    Benefit: Helps optimize efficiency, EMI performance, and short-circuit robustness while reducing voltage overshoot.

Additional Features to Consider: Depending on the application, designers may also benefit from integrated low-ohmic bootstrap diodes (BSD), overcurrent protection (OCP), fault reporting, enable functions, input filtering, active shutdown, separate source and sink outputs, short-circuit clamping, programmable deadtime, operational amplifiers (OPAMP), and galvanic isolation options including functional, basic, and reinforced isolation.

Key Gate Driver IC Selection Parameters

Selecting the right Gate Driver IC depends on a wide range of parameters. 

  • Power Device: The power switch being driven is often the starting point for gate driver selection. Different device technologies require different gate voltages, timing characteristics, and protection functions. Typical options are IGBTs, Si MOSFETs, CoolSiC™ MOSFETs, CoolGaN™ HEMTs.

  • Output Current: Determines how quickly the gate capacitance charges and discharges. Higher drive current enables faster switching and lower switching losses. Current range: 0.1 A to 18 A.

  • Isolation Type: Isolation separates the low-voltage controller from the high-voltage power stage. It impacts safety requirements, noise immunity, and certification needs. Typical options are Non-isolated, Functional Isolation, Basic Isolation, and Reinforced Isolation.

  • Voltage Class: Voltage class defines the maximum operating voltage supported by the gate driver architecture. Selecting the appropriate voltage class ensures compatibility with the target power stage, from low-voltage motor drives to high-voltage industrial, renewable energy, and EV systems.

  • Propagation Delay: Propagation delay is the time between the controller input signal and the corresponding gate driver output transition. Lower and closely matched delays help improve switching performance in half-bridge and three-phase inverter systems

Additional parameters to consider: Depending on the application, designers may also evaluate number of channels, gate supply voltage range, package, creepage distance, automotive qualification, functional safety, protection features such as DESAT, Active Miller Clamp, Soft Shutdown, Integrated over-current protection with fault reporting, Integrated low-ohmic bootstrap diode and Two-Level Turn-Off.

Explore Gate Driver Products

Eval Boards, Reference Designs, Selection Guides & Design Tools

Infineon provides a comprehensive ecosystem of design resources to help engineers evaluate, select, simulate, and implement EiceDRIVER™ Gate Driver solutions. 

  • Gate Driver Finder: Filter and compare EiceDRIVER™ ICs by topology, isolation level, output current, voltage, package, protection features and other parameters.
  • Gate Driver Evaluation Board Finder: Access EiceDRIVER™ evaluation boards, reference designs, and design tools to accelerate development and reduce design risk.
  • Cross-Reference Tool: Identify Infineon alternatives and second-source options for existing gate driver designs.
  • IPOSIM: Simulate switching losses, thermal behavior, and system efficiency using Infineon power semiconductors and gate driver solutions.

Featured Evaluation Boards and Reference Designs for AI Servers & Data Centers

  • EVAL_HB_2EDL900G3_SI: Evaluation Board for a Buck Converter Topology using 80 V OptiMOS™ MOSFETs and 120 V gate driver 2EDL900G3 with an integrated current sense amplifier.
  • EVAL_HB_2EDL6014AC: Evaluation Board for a Buck Converter Topology using 80 V OptiMOS™ MOSFETs and 120 V gate driver 2EDL6014AC-G2D with STA feature.
  • EVAL-2ED3146MC12L: Evaluation board for 2ED314xMC12L - 6.5 A, 5.7 kV (rms) dual-channel isolated gate driver with deadtime control.
  • EVAL-2EDF7268G_HB: Evaluation Board for 2EDF7268G - Compact 1500 V rms dual-channel isolated gate driver in 4x4 14pin VSON with Thermal Pads.
  • EVAL-1ED3330MC12M-SiC: Evaluation board for 1ED3142MC12H - 6.5 A, 5.7 kV (rms) single-channel isolated gate driver with separate outputs, 12.5 V UVLO.
  • EVAL-2ED130R-PR: Evaluation board for 2EP1xxR - 5 V, 20 W full bridge transformer ICs for isolated gate driver supply - with dual output peak rectification.

EiceDRIVER™ Gate Driver IC Portfolio Overview

Gate Driver ICs enable efficient switching and protection of IGBTs, Si MOSFETs, SiC MOSFETs, and GaN HEMTs in applications including industrial drives, renewable energy systems, EV charging, automotive electronics, AI data centers, power supplies, and home appliances.

Infineon's EiceDRIVER™ Gate Driver IC portfolio supports output currents from 0.1 A to 18 A and operating voltages up to 2500 V. Designed for automotive, industrial, and consumer applications, these solutions integrate protection features to reduce design complexity and improve reliability.

Key advantages:

  • Decades of Gate Driver expertise and market-proven solutions across Coreless Transformer, Silicon-on-Insulator, Junction Isolated, and Non-Isolated technologies.
  • Optimized for CoolSiC™ MOSFETs and CoolGaN™ HEMTs to maximize switching performance and system reliability.
  • Automotive-ready solutions with AEC-Q100 qualified options and support for ASIL-oriented functional safety designs.
  • Comprehensive design ecosystem - evaluation boards, reference designs, application notes, simulation models, and other design resources help accelerate development.

Explore the EiceDRIVER™ portfolio by:

  • Topology: High-side, low-side, half-bridge, three-phase, and other driver solutions including isolated gate drivers, transformer drivers, and motor drivers.
  • Power Device: IGBTs, Si MOSFETs, SiC MOSFETs, and GaN HEMTs.
  • Technology: Coreless transformer, Silicon-on-Insulator, Junction Isolated and Non-isolated.
  • Application: Automotive, industrial, and consumer systems.

High-Side, Low-Side, Half-Bridge, Three-Phase & Other Gate Driver ICs

  • High-Side Gate Driver ICs: High-side Gate Drivers are typically single-channel solutions used to drive a floating, switch-node referenced power switch. Available in level-shift and isolated architectures, they are commonly used in power supplies, EV charging, renewable energy, and industrial power conversion systems.
  • Low-Side Gate Driver ICs: Low-side Gate Drivers are typically one- or two-channel solutions used to drive ground-referenced power switches. They provide robust, high-current gate-drive capability for power supplies, motor control, and industrial applications, including transformer driver interface solutions.
  • Half-Bridge Gate Driver ICs: Dual-channel gate drivers integrate both high-side and low-side drivers in a single device, simplifying the control of half-bridge power stages. These half-bridge gate drivers include an interlock function to prevent the simultaneous activation of both outputs. Built on Infineon's Silicon-on-Insulator and Junction Isolated technologies, they are widely used in motor drives, home appliances, EV charging, renewable energy, and power supply applications.
  • Three-Phase Gate Driver ICs: Three-phase Gate Drivers integrate six driver channels to control a complete three-phase inverter stage. They simplify motor-control designs in robotics, industrial automation, home appliances, HVAC systems, and battery-powered applications.
  • Other Gate Driver ICs: Specialized Gate Driver solutions address applications requiring galvanic isolation, isolated bias-power generation, or automotive motor-control functionality.
    Isolated Gate Driver ICs       Transformer Driver ICs        MOTIX™ Motor Gate Driver ICs

Gate Driver Solutions for SiC MOSFET & GaN Switches

  • Gate Driver ICs for SiC MOSFETs
    CoolSiC™ MOSFETs benefit from EiceDRIVER™ isolated Gate Drivers with high CMTI, active Miller clamp functionality, wide output-side supply range, and galvanic isolation. These features help maximize efficiency while ensuring robust operation in high-voltage applications.

  • Gate Driver ICs for GaN HEMTs
    CoolGaN™ devices and EiceDRIVER™ Gate Driver ICs are designed to work together to achieve high efficiency and power density. Optimized solutions support both GaN GIT and Schottky-gate HEMTs while minimizing design effort and accelerating development.

Coreless Transformer, SOI, JI & Non-Isolated Technologies

  • Coreless Transformer (CT) Technology -  Infineon's CT technology enables galvanic isolation with excellent common-mode transient immunity, fast signal transmission, and robust operation in high-voltage environments. This technology is well suited for driving SiC MOSFET and GaN HEMT switches where noise immunity and switching performance are critical.
    Related product families: Isolated Gate Driver ICs,  Transformer Driver ICs
  • Silicon-on-Insulator (SOI) Technology - Infineon's SOI technology provides high noise immunity, high-voltage robustness, and reliable operation in industrial applications. SOI technology enables high-side and half-bridge gate driver architectures and supports integrated level-shift functionality for efficient high-voltage switching control.
  • Juntion Isolated (JI) Technology - Infineon's JI technology delivers reliable high-voltage performance and cost-effective integration across a broad portfolio of gate driver solutions. JI technology supports robust level-shift implementations while providing excellent long-term reliability for industrial and consumer applications.
  • Non-Isolated Technology - Non-isolated technology provides a compact, cost-effective solution for many power-conversion applications where galvanic isolation is not required. These solutions deliver fast switching performance, low propagation delays, and simplified system implementation while supporting a wide range of topologies.
    Related product families: Low-Side Gate Driver ICs

 

Find Gate Driver ICs for Automotive, Industrial & Consumer Applications

EiceDRIVER™ Gate Driver ICs support a wide range of power conversion and motor control applications across automotive, industrial, and consumer markets.
 

Related Automotive Solutions: Automotive Gate Driver ICs

EiceDRIVER™ Gate Driver Features: Protection, Control & Reliability

Infineon's EiceDRIVER™ Gate Driver ICs deliver integrated protection, control, and monitoring for reliable and high-performance power switching through a wide range of features.

  • DESAT (desaturation) Protection: Monitors the voltage across the power device to detect short-circuit and overload conditions.
    Benefit: Enables rapid fault detection and shutdown to help prevent catastrophic device failure.

  • Active Miller Clamp: Integrated clamp that prevents unwanted gate voltage rise caused by Miller current during high dV/dt switching events.
    Benefit: Reduces the risk of parasitic turn-on and improves switching robustness.

  • Shoot-Through Protection: Integrated logic that prevents simultaneous conduction of high-side and low-side switches.
    Benefit: Helps protect inverter stages and improve system reliability.

  • Soft Shutdown: A controlled shutdown mechanism activated during fault conditions.
    Benefit: Reduces voltage overshoot and stress on the power semiconductor device during abnormal operating events

  • Two-Level Turn-Off & Slew-Rate Control: Advanced switching-control techniques that manage turn-off behavior and switching speed during normal and fault conditions.
    Benefit: Helps optimize efficiency, EMI performance, and short-circuit robustness while reducing voltage overshoot.

Additional Features to Consider: Depending on the application, designers may also benefit from integrated low-ohmic bootstrap diodes (BSD), overcurrent protection (OCP), fault reporting, enable functions, input filtering, active shutdown, separate source and sink outputs, short-circuit clamping, programmable deadtime, operational amplifiers (OPAMP), and galvanic isolation options including functional, basic, and reinforced isolation.

Key Gate Driver IC Selection Parameters

Selecting the right Gate Driver IC depends on a wide range of parameters. 

  • Power Device: The power switch being driven is often the starting point for gate driver selection. Different device technologies require different gate voltages, timing characteristics, and protection functions. Typical options are IGBTs, Si MOSFETs, CoolSiC™ MOSFETs, CoolGaN™ HEMTs.

  • Output Current: Determines how quickly the gate capacitance charges and discharges. Higher drive current enables faster switching and lower switching losses. Current range: 0.1 A to 18 A.

  • Isolation Type: Isolation separates the low-voltage controller from the high-voltage power stage. It impacts safety requirements, noise immunity, and certification needs. Typical options are Non-isolated, Functional Isolation, Basic Isolation, and Reinforced Isolation.

  • Voltage Class: Voltage class defines the maximum operating voltage supported by the gate driver architecture. Selecting the appropriate voltage class ensures compatibility with the target power stage, from low-voltage motor drives to high-voltage industrial, renewable energy, and EV systems.

  • Propagation Delay: Propagation delay is the time between the controller input signal and the corresponding gate driver output transition. Lower and closely matched delays help improve switching performance in half-bridge and three-phase inverter systems

Additional parameters to consider: Depending on the application, designers may also evaluate number of channels, gate supply voltage range, package, creepage distance, automotive qualification, functional safety, protection features such as DESAT, Active Miller Clamp, Soft Shutdown, Integrated over-current protection with fault reporting, Integrated low-ohmic bootstrap diode and Two-Level Turn-Off.

Explore Gate Driver Products

Eval Boards, Reference Designs, Selection Guides & Design Tools

Infineon provides a comprehensive ecosystem of design resources to help engineers evaluate, select, simulate, and implement EiceDRIVER™ Gate Driver solutions. 

  • Gate Driver Finder: Filter and compare EiceDRIVER™ ICs by topology, isolation level, output current, voltage, package, protection features and other parameters.
  • Gate Driver Evaluation Board Finder: Access EiceDRIVER™ evaluation boards, reference designs, and design tools to accelerate development and reduce design risk.
  • Cross-Reference Tool: Identify Infineon alternatives and second-source options for existing gate driver designs.
  • IPOSIM: Simulate switching losses, thermal behavior, and system efficiency using Infineon power semiconductors and gate driver solutions.

Featured Evaluation Boards and Reference Designs for AI Servers & Data Centers

  • EVAL_HB_2EDL900G3_SI: Evaluation Board for a Buck Converter Topology using 80 V OptiMOS™ MOSFETs and 120 V gate driver 2EDL900G3 with an integrated current sense amplifier.
  • EVAL_HB_2EDL6014AC: Evaluation Board for a Buck Converter Topology using 80 V OptiMOS™ MOSFETs and 120 V gate driver 2EDL6014AC-G2D with STA feature.
  • EVAL-2ED3146MC12L: Evaluation board for 2ED314xMC12L - 6.5 A, 5.7 kV (rms) dual-channel isolated gate driver with deadtime control.
  • EVAL-2EDF7268G_HB: Evaluation Board for 2EDF7268G - Compact 1500 V rms dual-channel isolated gate driver in 4x4 14pin VSON with Thermal Pads.
  • EVAL-1ED3330MC12M-SiC: Evaluation board for 1ED3142MC12H - 6.5 A, 5.7 kV (rms) single-channel isolated gate driver with separate outputs, 12.5 V UVLO.
  • EVAL-2ED130R-PR: Evaluation board for 2EP1xxR - 5 V, 20 W full bridge transformer ICs for isolated gate driver supply - with dual output peak rectification.
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