1200V thinQ!™ SiC Schottky Diode
The New Generation 5 Enables a New Level of Efficiency and Reliability
New 1200V thinQ!™ SiC Schottky Diode Generation 5
With thinQ!™ Generation 5 Infineon presents a new leading edge technology for 1200V SiC diodes, delivering a new level of efficiency and reliability. Infineon’s thin wafer technology is now combined with a merged PN junction Schottky diode concept bringing improved conduction losses, thermal characteristics and extended surge capabilities. The result is a series of products delivering improved efficiency and reliability in Power Factor Correction (PFC) and Boost stages with respect to previous thinQ!™ generations.
The new generation is targeted for use in Solar Inverters, UPS systems, Motor Drives and high-end 3-phase SMPS. Using thinQ!™ Generation 5 with Infineon´s HighSpeed 3 IGBT, these applications not only benefit from improved efficiency but also from reduced EMI, increased system reliability and cost/size savings due to reduced cooling requirements.
|Continuous forward current I F||TO-247||TO-220 2pin||DPAK real2pin|
|2A||IDH02G120G5 2)||IDM02G120C5 2)|
|5A||IDH05G120C5 2)||IDM05G120C5 2)|
|8A||IDH08G120C5 2)||IDM08G120C5 2)|
|10A||IDW10G120C5B 1)||IDH10G120C5 2)|
|15A||IDW15G120C5B 1)||IDH15G120C5 2)|
1) B= dual-configuration with common cathode
2)Available in 2015
1200V thinQ!™ SiC Schottky Diode Generation 2
The very good thermal characteristics of the TO-247 in combination with the low V F of the 1200V SiC Schottky diodes Generation 2 make it particularly suitable in power applications where relatively high currents are demanded and utmost efficiency is required. With this package, Infineon offers a current capability of up to 30A in the 1200V range.