1200V CoolSiC™ Schottky Diode

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The New Generation 5 Enables a New Level of Efficiency and Reliability

Header_1200V_SiC Diode_WEB_LOW 

 

New 1200V CoolSiC™ Schottky Diode Generation 5

The implementation of highly efficient, compact and simple 3-phase inverter systems are currently limited by silicon devices' high dynamic losses operating at 1200V voltages. Alternative designs using 600V/650V devices can partially improve efficiency. However, they come at the expense of more complicated (3-level) topologies with complex control schemes and more power components.

 

Infineon’s 1200V SiC diode combined with a Si HighSpeed 3 IGBT enables simpler 2-level topologies due to its zero reverse recovery losses. It also delivers 40% lower Si IGBT turn-on losses and reduced EMI. Moreover, an improved thermal performance reduces now the junction temperature by 15% compared to a silicon based solution - increasing system reliability as well the possibility to increase output power in a given form factor.

 

The static losses of the SiC diode often limit the optimization potential of Si IGBT/SiC diode solutions. To fix this, the generation 5 diode comes with a reduction of forward voltage and its temperature dependency to reduce static losses and thereby the price to performance. The new generation 5 is targeted for use in Solar Inverters, UPS systems, Motor Drives and 3-phase SMPS. 


Product Portfolio 1200V CoolSiC™ Schottky Diodes Generation 5

Click on a product type to learn more and download datasheet

Continuous forward current I F TO-247 TO-220 2pin DPAK real 2pin
2A   IDH02G120C5 IDM02G120C5
5A   IDH05G120C5 IDM05G120C5
8A   IDH08G120C5 IDM08G120C5
10A IDW10G120C5B 1) IDH10G120C5 IDM10G120C5
15A/16A IDW15G120C5B 1) IDH16G120C5  
20A IDW20G120C5B 1) IDH20G120C5  
30A IDW30G120C5B 1)    
40A IDW40G120C5B 1)    

1) B= dual-configuration with common cathode

 

Product Portfolio 1200V CoolSiC™ Schottky Diode Generation 2

Click on a product type to learn more, download datasheet and order

  TO-220 real 2pin TO-247
2A

IDH02SG120*

 
5A

IDH05S120*

 
8A

IDH08S120*

 
10A

IDH10S120*

IDW10S120*

15A

IDH15S120*

IDW15S120*

20A  

IDW20S120*

30A  

IDW30S120*

*not for new design



New 1200V CoolSiC™ Schottky Diode Generation 5

Features Benefits Applications
  • Best-in-class forward voltage (V F)
  • No reverse recovery charge
  • Mild positive temperature dependency of V F
  • Best-in-class surge current capability
  • Excellent thermal performance
  • Up to 40A rated diode
  • Highest system efficiency
  • Improved system efficiency at low switching frequencies
  • Increased power density at high switching frequencies
  • Higher system reliability
  • Reduced EMI

Product Selection Guide

Title Size Date Version
21 MB 22 Feb 2016 00_00

Product Catalogue

Title Size Date Version
4.8 MB 21 Jun 2016 02_00

Product Brochure

Title Size Date Version
2.1 MB 09 May 2016 01_00

Product Brief

Title Size Date Version
466 KB 18 Apr 2016 01_00

Product Overview

Title Size Date Version
2 MB 14 Mar 2014 01_00

Application Brochure

Title Size Date Version
3.3 MB 01 Mar 2016 01_00
1.9 MB 26 Jun 2014 01_00

Application Notes

Title Size Date Version
570 KB 31 Jul 2015 01_00
2.2 MB 19 Dec 2014 02_00
791 KB 16 Jun 2014 01_00

Article

Title Size Date Version
530 KB 03 Dec 2015 01_00
145 KB 12 Mar 2015 01_00
1.4 MB 10 Sep 2014 01_00
339 KB 26 Sep 2012
1.6 MB 01 Sep 2012 01_00

Additional Product Information

Title Size Date Version
253 KB 11 Sep 2015 01_00

Presentations

Title Size Date Version
1,020 KB 11 May 2016 01_00
1200V SiC thinQ!™ Generation 5 Schottky Diodes

1200V CoolSiC™ Generation 5 Schottky Diodes

Infineon’s new 5th Generation 1200V CoolSiC™ Schottky diode portfolio offers designers of high power 3-phase applications new levels of efficiency and reliability.

 
Length 4:43

 

1200V SiC thinQ!™ Generation 5 Schottky Diode - Product Portfolio and Target Application

1200V CoolSiC™ Generation 5 Schottky Diode - Product Portfolio and Target Application

Comparison of SiC Schottky diodes forward voltage between Infineon Gen5 against Infineon Gen2 and two compare products. Datasheet and measurement forward voltage values are used to plot how much Gen5 has improved compared to previous gen and compare products.

 
Length 4:43

 

1200V SiC thinQ!™ Generation 5 Schottky Diode - Key Features - Reduction of Forward Voltage

1200V CoolSiC™ Generation 5 Schottky Diode - Key Features - Reduction of Forward Voltage

Comparison of SiC Schottky diodes forward voltage between Infineon Gen5 against Infineon Gen2 and two compare products. Datasheet and measurement forward voltage values are used to plot how much Gen5 has improved compared to previous gen and compare products.

 
Length 4:43

 

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