1200V thinQ!™ SiC Schottky Diode

 
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1200V thinQ!™ SiC Schottky Diode

The New Generation 5 Enables a New Level of Efficiency and Reliability

 

Header_1200V_SiC Diode_WEB_LOW

 

New 1200V thinQ!™ SiC Schottky Diode Generation 5

The implementation of highly efficient, compact and simple 3-phase inverter systems are currently limited by silicon devices' high dynamic losses operating at 1200V voltages. Alternative designs using 600V/650V devices can partially improve efficiency. However, they come at the expense of more complicated (3-level) topologies with complex control schemes and more power components.

 

Infineon’s 1200V SiC diode combined with a Si HighSpeed 3 IGBT enables simpler 2-level topologies due to its zero reverse recovery losses. It also delivers 40% lower Si IGBT turn-on losses and reduced EMI. Moreover, an improved thermal performance reduces now the junction temperature by 15% compared to a silicon based solution - increasing system reliability as well the possibility to increase output power in a given form factor.

 

The static losses of the SiC diode often limit the optimization potential of Si IGBT/SiC diode solutions. To fix this, the generation 5 diode comes with a reduction of forward voltage and its temperature dependency to reduce static losses and thereby the price to performance. The new generation 5 is targeted for use in Solar Inverters, UPS systems, Motor Drives and 3-phase SMPS. 

 

Product Portfolio 1200V thinQ!™ SiC Schottky Diodes Generation 5

Click on a product type to learn more and download datasheet

Continuous forward current I F TO-247 TO-220 2pin DPAK real 2pin
2A   IDH02G120G5 2) IDM02G120C5 2)
5A   IDH05G120C5 2) IDM05G120C5 2)
8A   IDH08G120C5 2) IDM08G120C5 2)
10A IDW10G120C5B 1) IDH10G120C5 2)  
15A IDW15G120C5B 1) IDH15G120C5 2)  
20A IDW20G120C5B 1)    
30A IDW30G120C5B 1)    
40A IDW40G120C5B 1)    

1) B= dual-configuration with common cathode
2) available in 2015

 

Product Portfolio 1200V thinQ!™ SiC Schottky Diode Generation 2

Click on a product type to learn more, download datasheet and order

  TO-220 real 2pin TO-247
2A

IDH02SG120

 
5A

IDH05S120

 
8A

IDH08S120

 
10A

IDH10S120

IDW10S120*

15A

IDH15S120

IDW15S120*

20A  

IDW20S120*

30A  

IDW30S120*

*not for new design




1200V thinQ!™ SiC Schottky Diode


New 1200V thinQ!™ SiC Schottky Diode Generation 5

Features Benefits Applications
  • Best-in-Class forward voltage (V F)
  • No reverse recovery charge
  • Mild positive temperature dependency of V F
  • Best-in-Class surge current capability
  • Excellent thermal performance
  • Up to 40A rated diode
  • Highest system efficiency
  • Improved system efficiency at low switching frequencies
  • Increased power density at high switching frequencies
  • Higher system reliability
  • Reduced EMI

 

1200V thinQ!™ SiC Schottky Diode Generation 2

The very good thermal characteristics of the TO-247 in combination with the low V F of the 1200V SiC Schottky diodes Generation 2 make it particularly suitable in power applications where relatively high currents are demanded and utmost efficiency is required. With this package, Infineon offers a current capability of up to 30A in the 1200V range.

 

Features Benefits Applications
  • Enabling higher frequency/increased power density
  • Higher system reliability due to lower operating temperature
  • Reduced EMI
  • System efficiency improvement compared to Si diodes

1200V thinQ!™ SiC Schottky Diode

Product Brochure

Title Size Date Version
4.1 MB 25 Mar 2014 01_00

Product Overview

Title Size Date Version
2 MB 14 Mar 2014

Application Notes

Title Size Date Version
651 KB 31 Jul 2015 01_00
2.4 MB 19 Dec 2014 02_00

Product Brief

Title Size Date Version
617 KB 12 Jun 2014

Application Brief

Title Size Date Version
564 KB 10 Dec 2014 01_00

Article

Title Size Date Version
145 KB 12 Mar 2015 01_00
1.4 MB 10 Sep 2014
339 KB 26 Sep 2012
1.6 MB 01 Sep 2012

Application Brochure

Title Size Date Version
1.9 MB 26 Jun 2014 01_00

Product Selection Guide

Title Size Date Version
11.6 MB 01 Feb 2015 01_00

1200V thinQ!™ SiC Schottky Diode

Simulation Models

Title Size Date Version
6 KB 12 Jun 2014

1200V thinQ!™ SiC Schottky Diode

Videos 1200V thinQ!™ SiC Schottky Diodes

1200V SiC thinQ!™ Generation 5 Schottky Diodes Product Portfolio and Target Applications Key Features Reduction of Forward Voltage

1200V thinQ!™ SiC Schottky Diode

1200V thinQ!™ SiC Schottky Diode

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