New 1200V thinQ!™ SiC Schottky Diode Generation 5
The implementation of highly efficient, compact and simple 3-phase inverter systems are currently limited by silicon devices' high dynamic losses operating at 1200V voltages. Alternative designs using 600V/650V devices can partially improve efficiency. However, they come at the expense of more complicated (3-level) topologies with complex control schemes and more power components.
Infineon’s 1200V SiC diode combined with a Si HighSpeed 3 IGBT enables simpler 2-level topologies due to its zero reverse recovery losses. It also delivers 40% lower Si IGBT turn-on losses and reduced EMI. Moreover, an improved thermal performance reduces now the junction temperature by 15% compared to a silicon based solution - increasing system reliability as well the possibility to increase output power in a given form factor.
The static losses of the SiC diode often limit the optimization potential of Si IGBT/SiC diode solutions. To fix this, the generation 5 diode comes with a reduction of forward voltage and its temperature dependency to reduce static losses and thereby the price to performance. The new generation 5 is targeted for use in Solar Inverters, UPS systems, Motor Drives and 3-phase SMPS.
Product Portfolio 1200V thinQ!™ SiC Schottky Diodes Generation 5
Click on a product type to learn more and download datasheet
|Continuous forward current I F||TO-247||TO-220 2pin||DPAK real 2pin|
1) B= dual-configuration with common cathode
Product Portfolio 1200V thinQ!™ SiC Schottky Diode Generation 2
Click on a product type to learn more, download datasheet and order
|TO-220 real 2pin||TO-247|
*not for new design