1200V thinQ!™ SiC Schottky Diode
The New Generation 5 Enables a New Level of Efficiency and Reliability
New 1200V thinQ!™ SiC Schottky Diode Generation 5
The implementation of highly efficient, compact and simple 3-phase inverter systems are currently limited by silicon devices' high dynamic losses operating at 1200V voltages. Alternative designs using 600V/650V devices can partially improve efficiency. However, they come at the expense of more complicated (3-level) topologies with complex control schemes and more power components.
Infineon’s 1200V SiC diode combined with a Si HighSpeed 3 IGBT enables simpler 2-level topologies due to its zero reverse recovery losses. It also delivers 40% lower Si IGBT turn-on losses and reduced EMI. Moreover, an improved thermal performance reduces now the junction temperature by 15% compared to a silicon based solution - increasing system reliability as well the possibility to increase output power in a given form factor.
The static losses of the SiC diode often limit the optimization potential of Si IGBT/SiC diode solutions. To fix this, the generation 5 diode comes with a reduction of forward voltage and its temperature dependency to reduce static losses and thereby the price to performance. The new generation 5 is targeted for use in Solar Inverters, UPS systems, Motor Drives and 3-phase SMPS.
Product Portfolio 1200V thinQ!™ SiC Schottky Diodes Generation 5
|Continuous forward current I F||TO-247||TO-220 2pin||DPAK real 2pin|
|2A||IDH02G120G5 2)||IDM02G120C5 2)|
|5A||IDH05G120C5 2)||IDM05G120C5 2)|
|8A||IDH08G120C5 2)||IDM08G120C5 2)|
|10A||IDW10G120C5B 1)||IDH10G120C5 2)|
|15A||IDW15G120C5B 1)||IDH15G120C5 2)|
1) B= dual-configuration with common cathode
2) available in 2015
1200V thinQ!™ SiC Schottky Diode Generation 2
The very good thermal characteristics of the TO-247 in combination with the low V F of the 1200V SiC Schottky diodes Generation 2 make it particularly suitable in power applications where relatively high currents are demanded and utmost efficiency is required. With this package, Infineon offers a current capability of up to 30A in the 1200V range.
|TO-220 real 2pin||TO-247|
*not for new design
|Product Selection Guide|
|01 Feb 2015||01_00||15.4 MB||EN|
|25 Mar 2014||01_00||4.1 MB|
|14 Mar 2014||2 MB||EN|
|12 Jun 2014||617 KB||EN|
|26 Jun 2014||01_00||1.9 MB||EN|
|Additional Product Information|
|01 Sep 2012||812 KB||EN|
|10 Sep 2014||1.4 MB||KO|
|31 Jul 2015||01_00||651 KB||EN|
|19 Dec 2014||02_00||2.4 MB||EN|