The new OptiMOS™ 5 150V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The new products offer a breakthrough reduction in R DS(on) (up to 25% compared to the next best alternative in SuperSO8) and Q rr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge (lowest Q rr in SuperSO8 = 26nC) increases commutation ruggedness.
The OptiMOS™ 5 150V technology enables smaller best-in-class SuperSO8 (PQFN 5x6) package devices to replace TO-220 alternatives. The switch provides increased power density and lower voltage overshoot (V DS) due to reduced package inductance.
Available in six packages, Infineon’s OptiMOS™ 5 150V power MOSFETs demonstrate not only lower output charge and higher switching frequency, but also ultra-low reverse recovery charge (Q rr). Consequently, the need for paralleling is reduced and end products are made more rugged, leading to overall system cost reduction.
|OptiMOS™ 5 150V comparison of R
DS(on) in SuperSO8,
D 2PAK and TO-220
|OptiMOS™ 5 150V comparison of Q rr in SuperSO8|
|Key features||Key benefits||Applications|