F-RAM (Ferroelectric RAM)

Highly reliable and low-power data logging memory with virtually unlimited endurance

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What are the benefits of Infineon’s Ferroelectric RAM memory chips?

F-RAM (Ferroelectric Random Access Memory or FeRAM) is a standalone non-volatile memory that captures and preserves critical data when power is interrupted. Each F-RAM chip delivers reliability for mission-critical data logging applications, including high-performance PLCs, automotive event data recorders, and patient monitoring devices.

Designed with a low-power architecture and small footprint, F-RAM memory chips give non-volatility and virtually unlimited endurance.

  • Looking to capture data instantly? Write data at bus speed with no delay, ensuring critical information is preserved the moment power is interrupted.
  • Need a memory solution with exceptional longevity? Our F-RAM memory chips offer up to 100 trillion read/write cycles, enabling continuous data logging for decades.
  • Want to reduce power consumption in your design? Infineon's F-RAM memory chips consume 200× less energy than EEPROMs and 3,000× less than NOR flash, making them ideal for battery-operated and energy-sensitive applications.

Specifications:

  • Density: 4 Kb, 16 Kb, 64 Kb, 128 Kb, 256 Kb, 512 Kb, 1 Mb, 2 Mb, 4 Mb, 8 Mb, and 16 Mb
  • Interface: I2C, SPI, QSPI, parallel (X8, X16)
Read more about Infineon's F-RAM chips

Key features of Infineon's ferroelectric RAM memory chips

Infineon's ferroelectric RAM solutions deliver advanced features that set our F-RAM memory chips apart from competing technologies: 

  • No delay write: Each F-RAM chip writes data to memory cells at bus speed with no soak time, ensuring instant data capture during power interruptions.
  • Exceptional endurance: Ferroelectric memory products outlast floating-gate memories with up to 100 trillion read/write cycles, enabling continuous data logging. 
  • Ultra-low power: F-RAM typically consumes 200x less energy than EEPROMs and 3000x less than NOR flash, making it ideal for battery-operated and energy-sensitive applications.
  • Radiation-tolerance: Unlike conventional memories, F-RAM demonstrates immunity to soft errors caused by radiation that can produce bit flips, ensuring data integrity in demanding environments. 

Comprehensive portfolio of serial and parallel F-RAM memory solutions

Infineon offers a comprehensive portfolio of serial and parallel ferroelectric RAM non-volatile memories to address diverse application requirements. Our standard F-RAM chips are available in densities ranging from 4 Kb to 4 Mb, providing reliable ferroelectric memory for industrial, medical, and consumer applications. 

EXCELON™ is Infineon’s next generation of F-RAM memory technology. These advanced F-RAM memory chips deliver the industry’s lowest-power non-volatile memory by combining ultra-low-power operation with high-speed QSPI interfaces (up to 108 MHz), instant nonvolatility, and up to 100 trillion read/write cycle endurance. EXELONTM is the ideal data logging solution for portable medical devices, wearables, IoT sensors, industrial systems, and automotive applications. Available in densities from 2 Mb to 16 Mb, they support both a 1.71 V to 1.89 V operating voltage range and a wide-voltage range of 1.8 V to 3.6 V .

Learn more about our EXCELON™ F-RAMs

Highly reliable F-RAM chip technology for non-volatile data storage 

Ferroelectric RAM memories are built on advanced ferroelectric technology that delivers superior performance and reliability. Each F-RAM chip contains a thin ferroelectric film of lead zirconate titanate (PZT). The atoms within PZT change polarity when exposed to an electric field, creating a power-efficient binary switch that retains its state without continuous power.

The most important characteristic of PZT is its immunity to power disruption, making every FeRAM chip reliable and non-volatile. Unlike floating-gate technologies that degrade over time, ferroelectric memory maintains data integrity throughout its operational lifetime. This unique memory cell architecture delivers specific advantages that differentiate F-RAM from competing memory technologies like EEPROM or NOR flash, including faster write speeds, lower power consumption and exceptional endurance.

Learn more about F-RAM technology here

Ferroelectric RAM vs EEPROM, MRAM, and NOR flash comparison 

Ferroelectric RAM is the industry’s most efficient non-volatile memory technology, consuming significantly lower active currents than competing EEPROM and MRAM solutions. This exceptional energy efficiency makes F-RAM chips the preferred choice for battery-operated devices, including wearables, medical implants, and portable IoT sensors.

In addition to superior power consumption, every FeRAM chip offers immunity to external magnetic fields. Unlike MRAM, F-RAM memory chips can perform read/write operations even after being exposed to strong magnetic fields. 

With a virtually unlimited endurance of up to 100 trillion cycles and instant non-volatility, F-RAMs consistently outperform existing memories like EEPROM and NOR flash across several data logging applications. The combination of speed, reliability and low power positions ferroelectric memory as the optimal solution for mission-critical systems.

Compare F-RAM with other nvRAMs

Which industries benefit from ferroelectric RAM memory solutions?

Infineon's F-RAM chips deliver reliable, low-power data logging across a wide range of demanding industries and applications.

  • Need reliable data capture in industrial automation? F-RAM memory chips are ideal for PLCs, RAID systems, and industrial controllers that require instant, non-volatile storage during power interruptions.
  • Designing for automotive safety systems? FeRAM chips provide robust data logging for event data recorders (EDRs), ADAS modules, and battery management systems operating in extreme temperatures.
  • Building medical devices that demand data integrity? Ferroelectric RAM ensures reliable storage for patient monitoring devices, and portable diagnostic equipment.
  • Developing IoT or wearable products? With ultra-low power consumption, fram memory chips extend battery life in smart meters, fitness trackers, and wireless sensors.
  • Working on aerospace or defence systems? F-RAM demonstrates immunity to radiation-induced soft errors, making it suitable for mission-critical environments.
Explore F-RAM applications in our product brochure

What are the benefits of Infineon’s Ferroelectric RAM memory chips?

F-RAM (Ferroelectric Random Access Memory or FeRAM) is a standalone non-volatile memory that captures and preserves critical data when power is interrupted. Each F-RAM chip delivers reliability for mission-critical data logging applications, including high-performance PLCs, automotive event data recorders, and patient monitoring devices.

Designed with a low-power architecture and small footprint, F-RAM memory chips give non-volatility and virtually unlimited endurance.

  • Looking to capture data instantly? Write data at bus speed with no delay, ensuring critical information is preserved the moment power is interrupted.
  • Need a memory solution with exceptional longevity? Our F-RAM memory chips offer up to 100 trillion read/write cycles, enabling continuous data logging for decades.
  • Want to reduce power consumption in your design? Infineon's F-RAM memory chips consume 200× less energy than EEPROMs and 3,000× less than NOR flash, making them ideal for battery-operated and energy-sensitive applications.

Specifications:

  • Density: 4 Kb, 16 Kb, 64 Kb, 128 Kb, 256 Kb, 512 Kb, 1 Mb, 2 Mb, 4 Mb, 8 Mb, and 16 Mb
  • Interface: I2C, SPI, QSPI, parallel (X8, X16)
Read more about Infineon's F-RAM chips

Key features of Infineon's ferroelectric RAM memory chips

Infineon's ferroelectric RAM solutions deliver advanced features that set our F-RAM memory chips apart from competing technologies: 

  • No delay write: Each F-RAM chip writes data to memory cells at bus speed with no soak time, ensuring instant data capture during power interruptions.
  • Exceptional endurance: Ferroelectric memory products outlast floating-gate memories with up to 100 trillion read/write cycles, enabling continuous data logging. 
  • Ultra-low power: F-RAM typically consumes 200x less energy than EEPROMs and 3000x less than NOR flash, making it ideal for battery-operated and energy-sensitive applications.
  • Radiation-tolerance: Unlike conventional memories, F-RAM demonstrates immunity to soft errors caused by radiation that can produce bit flips, ensuring data integrity in demanding environments. 

Comprehensive portfolio of serial and parallel F-RAM memory solutions

Infineon offers a comprehensive portfolio of serial and parallel ferroelectric RAM non-volatile memories to address diverse application requirements. Our standard F-RAM chips are available in densities ranging from 4 Kb to 4 Mb, providing reliable ferroelectric memory for industrial, medical, and consumer applications. 

EXCELON™ is Infineon’s next generation of F-RAM memory technology. These advanced F-RAM memory chips deliver the industry’s lowest-power non-volatile memory by combining ultra-low-power operation with high-speed QSPI interfaces (up to 108 MHz), instant nonvolatility, and up to 100 trillion read/write cycle endurance. EXELONTM is the ideal data logging solution for portable medical devices, wearables, IoT sensors, industrial systems, and automotive applications. Available in densities from 2 Mb to 16 Mb, they support both a 1.71 V to 1.89 V operating voltage range and a wide-voltage range of 1.8 V to 3.6 V .

Learn more about our EXCELON™ F-RAMs

Highly reliable F-RAM chip technology for non-volatile data storage 

Ferroelectric RAM memories are built on advanced ferroelectric technology that delivers superior performance and reliability. Each F-RAM chip contains a thin ferroelectric film of lead zirconate titanate (PZT). The atoms within PZT change polarity when exposed to an electric field, creating a power-efficient binary switch that retains its state without continuous power.

The most important characteristic of PZT is its immunity to power disruption, making every FeRAM chip reliable and non-volatile. Unlike floating-gate technologies that degrade over time, ferroelectric memory maintains data integrity throughout its operational lifetime. This unique memory cell architecture delivers specific advantages that differentiate F-RAM from competing memory technologies like EEPROM or NOR flash, including faster write speeds, lower power consumption and exceptional endurance.

Learn more about F-RAM technology here

Ferroelectric RAM vs EEPROM, MRAM, and NOR flash comparison 

Ferroelectric RAM is the industry’s most efficient non-volatile memory technology, consuming significantly lower active currents than competing EEPROM and MRAM solutions. This exceptional energy efficiency makes F-RAM chips the preferred choice for battery-operated devices, including wearables, medical implants, and portable IoT sensors.

In addition to superior power consumption, every FeRAM chip offers immunity to external magnetic fields. Unlike MRAM, F-RAM memory chips can perform read/write operations even after being exposed to strong magnetic fields. 

With a virtually unlimited endurance of up to 100 trillion cycles and instant non-volatility, F-RAMs consistently outperform existing memories like EEPROM and NOR flash across several data logging applications. The combination of speed, reliability and low power positions ferroelectric memory as the optimal solution for mission-critical systems.

Compare F-RAM with other nvRAMs

Which industries benefit from ferroelectric RAM memory solutions?

Infineon's F-RAM chips deliver reliable, low-power data logging across a wide range of demanding industries and applications.

  • Need reliable data capture in industrial automation? F-RAM memory chips are ideal for PLCs, RAID systems, and industrial controllers that require instant, non-volatile storage during power interruptions.
  • Designing for automotive safety systems? FeRAM chips provide robust data logging for event data recorders (EDRs), ADAS modules, and battery management systems operating in extreme temperatures.
  • Building medical devices that demand data integrity? Ferroelectric RAM ensures reliable storage for patient monitoring devices, and portable diagnostic equipment.
  • Developing IoT or wearable products? With ultra-low power consumption, fram memory chips extend battery life in smart meters, fitness trackers, and wireless sensors.
  • Working on aerospace or defence systems? F-RAM demonstrates immunity to radiation-induced soft errors, making it suitable for mission-critical environments.
Explore F-RAM applications in our product brochure

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