Active and preferred
RoHS Compliant
Lead-free

S80KS2563GABHV020

Data Sheet
package
ea.
in stock

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S80KS2563GABHV020
S80KS2563GABHV020
ea.
Data Sheet

Product details

  • Density
    256 MBit
  • Family
    KS-3
  • Initial Access Time
    35 ns
  • Interface Bandwidth
    400 MByte/s
  • Interface Frequency (SDR/DDR) (MHz)
    - / 200
  • Interfaces
    xSPI (Octal)
  • Lead Ball Finish
    Sn/Ag/Cu
  • Operating Temperature range
    -40 °C to 105 °C
  • Operating Voltage range
    1.7 V to 2 V
  • Operating Voltage
    1.8 V
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    See roadmap
  • Qualification
    Industrial
  • Technology
    HYPERRAM
Recommended
OPN
S80KS2563GABHV020
Product Status active and preferred
Infineon Package
PG-BGA-24
Package Name FBGA-24 (002-15550)
Packing Size 338
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-BGA-24
Package Name FBGA-24 (002-15550)
Packing Size 338
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The S80KS2563GABHV020 is a 256 Mb HYPERRAM self-refresh DRAM with an Octal xSPI interface (8-bit DQ plus RWDS) supporting DDR transfers up to 200 MHz and 400 MB/s. It runs from 1.7 V to 2.0 V and targets -40°C to +105°C Industrial Plus designs. Configurable linear or wrapped bursts (16 to 128 bytes), partial array refresh, interface standby, and 15 µA deep power down help balance bandwidth and power.

Features

  • Octal xSPI interface, DDR
  • 200 MHz maximum clock rate
  • Up to 400 MBps (3,200 Mbps)
  • 8-bit data bus DQ[7:0]
  • RWDS strobe and write data mask
  • Optional diff clock CK/CK#
  • Hardware reset pin RESET#
  • Linear or wrapped burst 16-128 B
  • Hybrid burst: wrapped then linear
  • Hybrid sleep retains memory data
  • Deep power down stops all refresh
  • 1.7 V to 2.0 V VCC supply

Benefits

  • DDR octal cuts pin count vs 16-bit
  • 400 MBps speeds memory bandwidth
  • 200 MHz supports fast xSPI hosts
  • RWDS improves DDR timing margin
  • Diff clock improves signal integrity
  • RESET# enables robust recovery
  • Burst options optimize bus efficiency
  • Hybrid burst fits cacheline fetches
  • Hybrid sleep lowers power, keeps data
  • Deep power down minimizes standby I
  • Low VCC reduces system power
  • ESD ratings improve handling margin

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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